Dual conical conducting filament model in resistance switching TiO2 thin films.
about
Interfacial chemical bonding-mediated ionic resistive switching.Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases.Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode OxidationInvestigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic ApplicationsGeometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performanceEffect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d filmsSingle-Readout High-Density Memristor Crossbar.Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.
P2860
Q33683307-3EAF54B3-D309-40E9-B285-A7CD4AE14A43Q36035494-51314E9D-1986-4D28-8AC9-D03CA9F22A1EQ36528612-5316830C-C5BF-4BC3-8544-D274B623134CQ36588643-6572DD55-2F6A-471C-969A-C5FEEF9422FEQ36681654-B847D43D-E318-47F7-A9A9-8B286BDE68CBQ36903169-B24BC933-141B-49B7-8A94-48DB0E51F98AQ37121854-7A26DD36-311E-4CFB-9F53-30A65EFA0EF7Q38923817-DAEDF1DC-CC45-48EA-9ECA-7A95D33146C3Q40589564-C4596038-7925-45AA-A9F5-7A732AE37AC6Q41995818-F9ADFBD3-C8D0-4464-AC9D-998EAA298D7EQ47151094-54FF5A5A-6DAE-47E5-9E46-CE85CF8894E7Q48052625-817D7DED-E8A3-4B9C-A4CF-341EFE948443Q50626284-B0CE43AD-5252-4B7F-83C0-D7A5E9039517Q51539153-286EBA5E-212B-467D-8879-FE48C8F738CC
P2860
Dual conical conducting filament model in resistance switching TiO2 thin films.
description
2015 nî lūn-bûn
@nan
2015 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2015 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
name
Dual conical conducting filament model in resistance switching TiO2 thin films.
@ast
Dual conical conducting filament model in resistance switching TiO2 thin films.
@en
Dual conical conducting filament model in resistance switching TiO2 thin films.
@nl
type
label
Dual conical conducting filament model in resistance switching TiO2 thin films.
@ast
Dual conical conducting filament model in resistance switching TiO2 thin films.
@en
Dual conical conducting filament model in resistance switching TiO2 thin films.
@nl
prefLabel
Dual conical conducting filament model in resistance switching TiO2 thin films.
@ast
Dual conical conducting filament model in resistance switching TiO2 thin films.
@en
Dual conical conducting filament model in resistance switching TiO2 thin films.
@nl
P2093
P2860
P356
P1433
P1476
Dual conical conducting filament model in resistance switching TiO2 thin films.
@en
P2093
Cheol Seong Hwang
Kyung Min Kim
Tae Hyung Park
P2860
P2888
P356
10.1038/SREP07844
P407
P577
2015-01-19T00:00:00Z
P5875
P6179
1003982855