Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.
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Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d filmsEndurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode MaterialOrdering and phase separation in Gd-doped ceria: a combined DFT, cluster expansion and Monte Carlo study.Pt/WO3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing.
P2860
Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.
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2015 nî lūn-bûn
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2015年の論文
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2015年論文
@yue
2015年論文
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2015年論文
@zh-hk
2015年論文
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2015年論文
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2015年论文
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2015年论文
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2015年论文
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name
Evidence of Filamentary Switch ...... nd Retention Failure Analysis.
@en
type
label
Evidence of Filamentary Switch ...... nd Retention Failure Analysis.
@en
prefLabel
Evidence of Filamentary Switch ...... nd Retention Failure Analysis.
@en
P2860
P356
P1433
P1476
Evidence of Filamentary Switch ...... and Retention Failure Analysis
@en
P2093
P2860
P2888
P356
10.1038/SREP13599
P407
P50
P577
2015-09-01T00:00:00Z