Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.
about
The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2.Using defects to store energy in materials - a computational study.Adsorption energy of oxygen molecules on graphene and two-dimensional tungsten disulfide.Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy.Layered memristive and memcapacitive switches for printable electronics.Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams.Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.Optically tuned terahertz modulator based on annealed multilayer MoS2.Nonlinear photoluminescence in monolayer WS2: parabolic emission and excitation fluence-dependent recombination dynamics.R6G molecule induced modulation of the optical properties of reduced graphene oxide nanosheets for use in ultrasensitive SPR sensing.Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatmentThe Effect of VMoS3 Point Defect on the Elastic Properties of Monolayer MoS2 with REBO PotentialsControl of Radiative Exciton Recombination by Charge Transfer Induced Surface Dipoles in MoS2 and WS2 Monolayers.Modulation of electronic properties from stacking orders and spin-orbit coupling for 3R-type MoS2.Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm.Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.Markedly different adsorption behaviors of gas molecules on defective monolayer MoS2: a first-principles study.Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis.Manipulation of local optical properties and structures in molybdenum-disulfide monolayers using electric field-assisted near-field techniques.Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet.Direct bandgap transition in many-layer MoS2 by plasma-induced layer decoupling.Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2.The influence of water on the optical properties of single-layer molybdenum disulfide.Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS 2.Synthesis of uniform single layer WS2 for tunable photoluminescence.Controlled dynamic screening of excitonic complexes in 2D semiconductors.Controlled defect creation and removal in graphene and MoS2 monolayers.Thermal conductivity of suspended few-layer MoS2.Air Passivation of Chalcogen Vacancies in Two-Dimensional Semiconductors.Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population.P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation.Towards a Comprehensive Understanding of the Reaction Mechanisms Between Defective MoS2 and Thiol Molecules.Interfacial strength and surface damage characteristics of atomically-thin h-BN, MoS2 and graphene.Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS_{2}.Interaction between H2O, N2, CO, NO, NO2 and N2O molecules and a defective WSe2 monolayer.
P2860
Q28821877-65D87E25-7CF6-4363-80C6-B7D2BD5097BFQ30855692-91F8A287-6C95-4343-922C-5C7A34920905Q33687657-D2225A6F-4403-45ED-8A57-CEA1219302D6Q33780954-6AF360CD-7436-439E-AD1D-9A7FB016A40EQ34447087-FC664537-A454-441D-845B-9183D94FE559Q34535970-0FCB354B-2B23-484F-9C92-5E9676CC69DBQ35841317-C72DE0C5-BA8D-4143-957A-9321C3789757Q35948741-3EA34976-3CEE-4860-B21D-3D38B0BCD901Q36373912-D4A551B7-EE69-478C-8DD3-5321F0AEC30FQ36592030-E24C388C-217C-4D63-8D98-BFC7FF2A3BB3Q36629028-FFC76F3F-0F46-4FB1-AE62-74CDE00F4EF5Q36712288-8F61B56E-A9E6-4A7E-BC97-A2F55BE87BD8Q36773922-EF694D05-96BF-45BC-BA23-354E2B66F205Q36774436-E0C8E23D-7B07-406E-9700-037C76DACED1Q36835672-268B3179-436C-4BEF-921A-68CEE5999F6BQ38254336-AE1AD8C8-E67A-46DF-A98E-557CC79AC277Q38531628-9B8336A9-C11C-426C-B619-93E430524FBFQ38673289-A44EAF85-387A-460C-A1BD-C938675CE206Q38754292-3A81FFDE-F7E0-46D7-B33A-E54FBA9853CAQ38800133-B612E9B9-7874-43A0-8C2F-935626AEC30BQ38865061-CEAF40FB-8F06-45E6-A450-23513F3FF7B0Q39179652-A8162B55-137A-4064-BD1B-9CA6BBFA91E3Q41903952-8B853E4B-DDAC-4D3E-B292-342F0FF928E4Q45817472-FEAA2D27-4E9E-47FC-9978-FA1B20589ED7Q46263883-A9367671-944D-413B-9A06-444D8D021F77Q46524987-6373C9B0-1898-4005-BB8E-68133AB0A52DQ46655979-234A2D45-E99C-4A42-AC28-07678F4AF909Q47108727-44E303F6-E98B-4C6C-8755-451B62C5E643Q47155530-834B21AE-6F05-4785-AAA6-3F8B3B19B5EBQ47155837-8041D880-98B8-4DFD-AB0A-6580B3DB61C0Q47563117-9E2E28A5-F705-40A7-8ED4-EDE34FFE95A6Q47996550-34F5A9A3-4FF1-4184-83DD-5419DA3832FCQ48043916-561AA9F1-342D-4A8D-A105-A1FF8FFFE186Q48044867-C3BAB3C0-4EC0-4B9F-9AF0-603B21CA3685Q48048862-A891F8FE-D9DF-4DBC-AF3D-FD4FDBE373F4Q48272029-1B056A54-9328-4FD6-8AE3-022E14172C91Q48546228-A18C6A1B-7449-498F-BA4C-6F21D1B5D87DQ49717856-9F9BD3FC-8BAF-4D23-B89F-1AA7541480E1Q49826946-A84965EE-7F3D-4825-A4BE-40CDE125EF0BQ50048972-729FAD50-C32A-450A-A761-AB403D404EDE
P2860
Strong photoluminescence enhancement of MoS(2) through defect engineering and oxygen bonding.
description
2014 nî lūn-bûn
@nan
2014 թուականի Մայիսին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի մայիսին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@ast
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@en
type
label
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@ast
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@en
prefLabel
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@ast
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@en
P2093
P50
P356
P1433
P1476
Strong photoluminescence enhan ...... ngineering and oxygen bonding.
@en
P2093
Haiyan Nan
Pingheng Tan
Wenhui Wang
Zheng Liang
Zhenhua Ni
P304
P356
10.1021/NN500532F
P407
P577
2014-05-20T00:00:00Z