Layered memristive and memcapacitive switches for printable electronics.
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Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers.Adaptive microwave impedance memory effect in a ferromagnetic insulator.MoS2 memristor with photoresistive switching.Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioOrganolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials.An updated roadmap for the integration of metal-organic frameworks with electronic devices and chemical sensors.Assembly and Electronic Applications of Colloidal Nanomaterials.Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides.Solution-Processed Two-Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications.Dry writing of highly conductive electrodes on papers by using silver nanoparticle-graphene hybrid pencils.Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.Memristive phase switching in two-dimensional 1T-TaS2 crystals.A novel true random number generator based on a stochastic diffusive memristor.Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices.Electrostatic-Driven Exfoliation and Hybridization of 2D Nanomaterials.Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2 nanosheets for nonvolatile rewritable memory devices.Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films.Surface properties of MoS2 probed by inverse gas chromatography and their impact on electrocatalytic properties.Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory.Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices.Enhancement of Exciton Emission from Multilayer MoS2 at High Temperatures: Intervalley Transfer versus Interlayer Decoupling.Mimicking Classical Conditioning Based on a Single Flexible Memristor.The dynamics of copper intercalated molybdenum ditelluride.Designed Assembly and Integration of Colloidal Nanocrystals for Device Applications.Three-Component Integrated Ultrathin Organic Photosensors for Plastic Optoelectronics.A hardware Markov chain algorithm realized in a single device for machine learningElectrical Switching in Thin Film Structures Based on Transition Metal Oxides
P2860
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P2860
Layered memristive and memcapacitive switches for printable electronics.
description
2014 nî lūn-bûn
@nan
2014 թուականի Նոյեմբերին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի նոյեմբերին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Layered memristive and memcapacitive switches for printable electronics.
@ast
Layered memristive and memcapacitive switches for printable electronics.
@en
Layered memristive and memcapacitive switches for printable electronics.
@nl
type
label
Layered memristive and memcapacitive switches for printable electronics.
@ast
Layered memristive and memcapacitive switches for printable electronics.
@en
Layered memristive and memcapacitive switches for printable electronics.
@nl
prefLabel
Layered memristive and memcapacitive switches for printable electronics.
@ast
Layered memristive and memcapacitive switches for printable electronics.
@en
Layered memristive and memcapacitive switches for printable electronics.
@nl
P2093
P2860
P356
P1433
P1476
Layered memristive and memcapacitive switches for printable electronics.
@en
P2093
Alexander A Bessonov
Dmitrii I Petukhov
Marc J A Bailey
Marina N Kirikova
Mark Allen
Tapani Ryhänen
P2860
P2888
P304
P356
10.1038/NMAT4135
P407
P577
2014-11-10T00:00:00Z
P5875
P6179
1014620859