Impact of program/erase operation on the performances of oxide-based resistive switching memory
about
Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive SwitchingAnalysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM DeviceResistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites.
P2860
Impact of program/erase operation on the performances of oxide-based resistive switching memory
description
2015 nî lūn-bûn
@nan
2015 թուականի Փետրուարին հրատարակուած գիտական յօդուած
@hyw
2015 թվականի փետրվարին հրատարակված գիտական հոդված
@hy
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
name
Impact of program/erase operat ...... sed resistive switching memory
@ast
Impact of program/erase operat ...... sed resistive switching memory
@en
type
label
Impact of program/erase operat ...... sed resistive switching memory
@ast
Impact of program/erase operat ...... sed resistive switching memory
@en
prefLabel
Impact of program/erase operat ...... sed resistive switching memory
@ast
Impact of program/erase operat ...... sed resistive switching memory
@en
P2093
P2860
P1476
Impact of program/erase operat ...... sed resistive switching memory
@en
P2093
Baohe Yang
Dinglin Xu
Guoming Wang
Hangbing Lv
Hongtao Liu
Meiyun Zhang
Shibing Long
P2860
P2888
P356
10.1186/S11671-014-0721-2
P577
2015-02-05T00:00:00Z
P5875
P6179
1044206099