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Distributed Bayesian Computation and Self-Organized Learning in Sheets of Spiking Neurons with Local Lateral InhibitionAsymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory designRealization of Minimum and Maximum Gate Function in Ta2O5-based Memristive DevicesNanobatteries in redox-based resistive switches require extension of memristor theoryReversible voltage dependent transition of abnormal and normal bipolar resistive switchingA memristive hyperchaotic system without equilibriumHierarchical Chunking of Sequential Memory on Neuromorphic Architecture with Reduced Synaptic Plasticity.Multistate Memristive Tantalum Oxide Devices for Ternary ArithmeticInterplay of multiple synaptic plasticity features in filamentary memristive devices for neuromorphic computing.Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule.Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.Probing nanoscale oxygen ion motion in memristive systemsTime-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5-x/W device.Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays.Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristorsAdaptive microwave impedance memory effect in a ferromagnetic insulator.Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.Memristive property's effects on the I-V characteristics of perovskite solar cellsStudy of multi-level characteristics for 3D vertical resistive switching memoryTaOx-based resistive switching memories: prospective and challenges.Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.Thermoelectric Seebeck effect in oxide-based resistive switching memoryLayered memristive and memcapacitive switches for printable electronics.Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.Quantum memristors.Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.Impact of program/erase operation on the performances of oxide-based resistive switching memoryInvestigation of LRS dependence on the retention of HRS in CBRAM.Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.Complex Learning in Bio-plausible Memristive NetworksStatistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.Resistive switching properties of epitaxial BaTiO(3-δ) thin films tuned by after-growth oxygen cooling pressure.A learnable parallel processing architecture towards unity of memory and computing.Atomic View of Filament Growth in Electrochemical Memristive ElementsA double barrier memristive device.Thermally induced crystallization in NbO2 thin films.
P2860
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P2860
description
article científic
@ca
article scientifique
@fr
articol științific
@ro
articolo scientifico
@it
artigo científico
@gl
artigo científico
@pt
artigo científico
@pt-br
artikel ilmiah
@id
artikull shkencor
@sq
artículo científico
@es
name
Memristive devices for computing.
@en
type
label
Memristive devices for computing.
@en
prefLabel
Memristive devices for computing.
@en
P2093
P356
P1476
Memristive devices for computing.
@en
P2093
Dmitri B Strukov
Duncan R Stewart
J Joshua Yang
P2888
P356
10.1038/NNANO.2012.240
P407
P577
2013-01-01T00:00:00Z
P5875
P6179
1045168777