Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

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Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.

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2016 nî lūn-bûn

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2016年の論文

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2016年論文

@yue

2016年論文

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2016年論文

@zh-hk

2016年論文

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2016年論文

@zh-tw

2016年论文

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2016年论文

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2016年论文

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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Growth of High Material Qualit ...... y a Naturally Cooling Process.

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P1476

Growth of High Material Qualit ...... y a Naturally Cooling Process.

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P2093

Huayong Pan

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Jingyun Wang

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Kan Li

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Wei Pan

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Yingjie Xing

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Synthesis and properties of antimonide nanowires.

Sintering of catalytic nanoparticles: particle migration or Ostwald ripening?

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The influence of the surface migration of gold on the growth of silicon nanowires.

Diameter-dependent growth direction of epitaxial silicon nanowires.

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

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s11671-016-1443-4

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scholarly article

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10.1186/S11671-016-1443-4

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Hongqi Xu

Shaoyun Huang

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2016-04-26T00:00:00Z

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1018440758

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27112353

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Erdieroale

nanowire

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4844582

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