Synthesis and properties of antimonide nanowires.

Synthesis and properties of antimonide nanowires.

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http://www.wikidata.org/entity/Q38100016
Indium Antimonide Nanowires: Synthesis and PropertiesSelf-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures.Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process.Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.Polarity and growth directions in Sn-seeded GaSb nanowires.Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.Selective GaSb radial growth on crystal phase engineered InAs nanowires.Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires.Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxyIII–V Nanowires: Synthesis, Property Manipulations, and Device Applications
P2860

Synthesis and properties of antimonide nanowires.

Item
http://www.wikidata.org/entity/Q38100016
description
article científic
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article scientifique
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articol științific
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articolo scientifico
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artigo científico
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artigo científico
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artigo científico
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artikel ilmiah
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artikull shkencor
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artículo científico
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name
Synthesis and properties of antimonide nanowires.
@en
type
label
Synthesis and properties of antimonide nanowires.
@en
prefLabel
Synthesis and properties of antimonide nanowires.
@en
P1433
P1476
P2093
P304
P31
P356
P433
P478
P50
P577
P5875
P698
P921
P356
P1433
P1476
Synthesis and properties of antimonide nanowires.
@en
P2093
P304
P31
P356
10.1088/0957-4484/24/20/202001
P433
P478
P50
P577
P5875
P698
P921