High-frequency self-aligned graphene transistors with transferred gate stacks
about
Thermodynamic picture of ultrafast charge transport in graphene.Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors.High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer grapheneImproved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.Photosensitive graphene transistors.Spiers Memorial Lecture. Advances of carbon nanomaterials.Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors.Graphene radio frequency receiver integrated circuit.Integrated Ring Oscillators based on high-performance Graphene Inverters.On-Surface Synthesis of Atomically Precise Graphene Nanoribbons.Graphene Klein tunnel transistors for high speed analog RF applications.Evidence of electric field-tunable tunneling probability in graphene and metal contact.Predicting a graphene-like WB4 nanosheet with a double Dirac cone, an ultra-high Fermi velocity and significant gap opening by spin-orbit coupling.Strong field transient manipulation of electronic states and bands.Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substratesGraphene-based non-Boolean logic circuitsTwo-dimensional materials for electronic applications
P2860
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P2860
High-frequency self-aligned graphene transistors with transferred gate stacks
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
2012年论文
@zh
2012年论文
@zh-cn
name
High-frequency self-aligned graphene transistors with transferred gate stacks
@ast
High-frequency self-aligned graphene transistors with transferred gate stacks
@en
type
label
High-frequency self-aligned graphene transistors with transferred gate stacks
@ast
High-frequency self-aligned graphene transistors with transferred gate stacks
@en
prefLabel
High-frequency self-aligned graphene transistors with transferred gate stacks
@ast
High-frequency self-aligned graphene transistors with transferred gate stacks
@en
P2093
P2860
P356
P1476
High-frequency self-aligned graphene transistors with transferred gate stacks
@en
P2093
Hailong Zhou
Jingwei Bai
Shan Jiang
Yung-Chen Lin
P2860
P304
11588-11592
P356
10.1073/PNAS.1205696109
P407
P577
2012-07-02T00:00:00Z