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Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes.Magnetic-flux-driven topological quantum phase transition and manipulation of perfect edge states in graphene tube.Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.
P2860
description
article
@en
im Oktober 2013 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в жовтні 2013
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name
Graphene-based non-Boolean logic circuits
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Graphene-based non-Boolean logic circuits
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type
label
Graphene-based non-Boolean logic circuits
@en
Graphene-based non-Boolean logic circuits
@nl
prefLabel
Graphene-based non-Boolean logic circuits
@en
Graphene-based non-Boolean logic circuits
@nl
P2093
P2860
P356
P1476
Graphene-based non-Boolean logic circuits
@en
P2093
Alexander A. Balandin
Alexander G. Khitun
Guanxiong Liu
Roger K. Lake
Sonia Ahsan
P2860
P304
P356
10.1063/1.4824828
P577
2013-10-21T00:00:00Z