Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.
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Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.
P2860
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@ast
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@en
type
label
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@ast
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@en
prefLabel
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@ast
Temperature-Dependent Non-line ...... g a New W/WO3/WOx/W Structure.
@en
P2093
P2860
P1476
Temperature-Dependent Non-line ...... ng a New W/WO3/WOx/W Structure
@en
P2093
Hsin-Ming Cheng
Somsubhra Chakrabarti
Subhranu Samanta
P2860
P2888
P356
10.1186/S11671-016-1602-7
P577
2016-09-07T00:00:00Z
P6179
1036486144