TaOx-based resistive switching memories: prospective and challenges.
about
Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.Self-compliance RRAM characteristics using a novel W/TaO x /TiN structureRetention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.Investigation of LRS dependence on the retention of HRS in CBRAM.Conductive-bridging random access memory: challenges and opportunity for 3D architecture.Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.RRAM characteristics using a new Cr/GdOx/TiN structure.Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.Conductance Quantization in Resistive Random Access Memory.Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performanceMaterial insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemorySelf-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.Voltage divider effect for the improvement of variability and endurance of TaO(x) memristorScalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.Electrochemical Tantalum Oxide for Resistive Switching Memories.Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory
P2860
Q33716896-6445AFFC-F2C1-4654-8103-15F71137C241Q33789232-122A6A46-3B40-4979-AE77-D3ECEFD70C32Q33793880-CDAD9F5A-5695-4D33-8E9B-06394E016EC0Q34035955-53095E75-5F25-4FD3-9A53-EBE9F5287650Q34530318-6A56E838-4E93-4342-8E05-B513D954E0B0Q35264965-25BD235B-7B01-4B50-A42E-D05D60C27B68Q35547811-F7E5EB18-337D-4390-AF53-D6B23DDC8E54Q35613164-AEA2DAA3-0BBD-4477-87FB-35944CEC9186Q35668040-64258155-75FB-4AC1-B723-AE5A54188BB1Q35668051-8488C70F-C5F1-419F-9EDF-D80FE97BBE89Q35825454-BC7FEFD3-26BE-4B9C-B2C2-600AFB223B2CQ36125896-D238779C-696F-46C7-8DE1-07D6D1B6E3A9Q36214844-C636799C-BF87-43F5-8DAF-13A60B1E7616Q36903169-3080034F-D36F-4850-99FF-EA25DE479C6EQ37014906-1F1F7E97-3B02-404A-AAA1-5EFE27E9E0ABQ37181295-4DB2DB4C-E00C-478E-97B7-2534498F982AQ37426391-A4ACBD0A-3267-4683-BA5A-5505D4F04CA3Q37497893-153F2B20-251E-44B2-B12A-80F866E944FDQ42541435-2DADB70B-881E-4985-B6B5-D6A1F369B9D0Q47652672-0EB595D2-3767-4009-A855-6C9521EEF134Q47739098-D36D8B1D-E87F-412B-BDD6-B2E42C60C765Q47850681-FAA1471A-061F-4902-8191-CDEF4AFC0CD4Q50662616-708E37F3-F266-41EC-8912-8C1DA1E3DCF6Q58714827-9B383544-31BF-483C-BE48-CA35BC5BBF3B
P2860
TaOx-based resistive switching memories: prospective and challenges.
description
2013 nî lūn-bûn
@nan
2013 թուականի Հոկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2013 թվականի հոտեմբերին հրատարակված գիտական հոդված
@hy
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
name
TaOx-based resistive switching memories: prospective and challenges.
@ast
TaOx-based resistive switching memories: prospective and challenges.
@en
TaOx-based resistive switching memories: prospective and challenges.
@nl
type
label
TaOx-based resistive switching memories: prospective and challenges.
@ast
TaOx-based resistive switching memories: prospective and challenges.
@en
TaOx-based resistive switching memories: prospective and challenges.
@nl
prefLabel
TaOx-based resistive switching memories: prospective and challenges.
@ast
TaOx-based resistive switching memories: prospective and challenges.
@en
TaOx-based resistive switching memories: prospective and challenges.
@nl
P2860
P356
P1476
TaOx-based resistive switching memories: prospective and challenges.
@en
P2093
Amit Prakash
Debanjan Jana
P2860
P2888
P356
10.1186/1556-276X-8-418
P577
2013-10-09T00:00:00Z
P6179
1040357960