Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

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Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation.Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth.

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Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

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http://www.wikidata.org/entity/Q36796122

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2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年論文

@yue

2016年論文

@zh-hant

2016年論文

@zh-hk

2016年論文

@zh-mo

2016年論文

@zh-tw

2016年论文

@wuu

2016年论文

@zh

2016年论文

@zh-cn

name

Carrier-induced transient defe ...... n InGaN light-emitting devices

@en

type

Item

label

Carrier-induced transient defe ...... n InGaN light-emitting devices

@en

prefLabel

Carrier-induced transient defe ...... n InGaN light-emitting devices

@en

P1476

Carrier-induced transient defe ...... n InGaN light-emitting devices

@en

P2093

Jung-Hoon Song

http://www.w3.org/2001/XMLSchema#string

Junhyeok Bang

http://www.w3.org/2001/XMLSchema#string

Y Y Sun

http://www.w3.org/2001/XMLSchema#string

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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes

Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study.

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Auger recombination rates in nitrides from first principles

First-principles calculations for defects and impurities: Applications to III-nitrides

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srep24404

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24404

http://www.w3.org/2001/XMLSchema#string

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scholarly article

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10.1038/SREP24404

http://www.w3.org/2001/XMLSchema#string

P407

English

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http://www.w3.org/2001/XMLSchema#string

P50

Shengbai Zhang

P577

2016-04-14T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27075818

http://www.w3.org/2001/XMLSchema#string

P932

4830943

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Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

about

P2860

P2860

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932