The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
about
Cyclic deformation leads to defect healing and strengthening of small-volume metal crystals.Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dotsCarrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation EnergyTHz Acoustic Spectroscopy by using Double Quantum Wells and Ultrafast Optical Spectroscopy.Nanoscale anisotropic plastic deformation in single crystal GaNAll-nitride AlxGa1-xN:Mn/GaN distributed Bragg reflectors for the near-infrared.Imaging dislocations in gallium nitride across broad areas using atomic force microscopy.GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.Rattle-type hollow CaWO4:Tb(3+)@SiO2 nanocapsules as carriers for drug delivery.Three-dimensional imaging of dislocations in a nanoparticle at atomic resolution.Indium segregation measured in InGaN quantum well layerUltraviolet Lasers Realized via Electrostatic Doping MethodSynthesis and field emission studies of tower-like GaN nanowiresHigh-temperature continuous-wave laser realized in hollow microcavities.Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LEDCarrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodesReal-Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron Microscopy.InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysisCorrelation between band gap, dielectric constant, Young's modulus and melting temperature of GaN nanocrystals and their size and shape dependences.Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications.Impurity Resonant States p-type Doping in Wide-Band-Gap NitridesEffects of local structure of Ce(3+) ions on luminescent properties of Y3Al5O12:Ce nanoparticles.Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devicesA novel wavelength-adjusting method in InGaN-based light-emitting diodes.Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals.Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.A generalized model for time-resolved luminescence of localized carriers and applications: Dispersive thermodynamics of localized carriers.Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals.Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis.Progress on extending the light absorption spectra of photocatalysts.Enhanced magneto-optical properties of semiconductor EuS nanocrystals assisted by surface plasmon resonance of gold nanoparticles.Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS.III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.Phonon Surface Scattering and Thermal Energy Distribution in Superlattices.Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature.Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors.Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering.Ultraintense UV emission from ZnO-sheathed ZnS nanorods
P2860
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P2860
The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
description
1998 nî lūn-bûn
@nan
1998 թուականի Օգոստոսին հրատարակուած գիտական յօդուած
@hyw
1998 թվականի օգոստոսին հրատարակված գիտական հոդված
@hy
1998年の論文
@ja
1998年論文
@yue
1998年論文
@zh-hant
1998年論文
@zh-hk
1998年論文
@zh-mo
1998年論文
@zh-tw
1998年论文
@wuu
name
The roles of structural imperf ...... itting diodes and laser diodes
@ast
The roles of structural imperf ...... itting diodes and laser diodes
@en
type
label
The roles of structural imperf ...... itting diodes and laser diodes
@ast
The roles of structural imperf ...... itting diodes and laser diodes
@en
prefLabel
The roles of structural imperf ...... itting diodes and laser diodes
@ast
The roles of structural imperf ...... itting diodes and laser diodes
@en
P1433
P1476
The roles of structural imperf ...... itting diodes and laser diodes
@en
P2093
Nakamura S
P304
P356
10.1126/SCIENCE.281.5379.956
P407
P577
1998-08-01T00:00:00Z