Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets

about

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions Tailoring magnetic properties of multicomponent layered structure via current annealing in FePd thin films.Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects.

P2860

Q36237797-0BD8E7B1-D9CD-490E-9D17-8C89EDDFB0A1 Q47128312-74E49D5C-BD2B-4E5D-83DE-CF56F05BB0B0 Q53828895-927B88FC-032D-4EC8-9130-0E89ACB28DB3

P2860

Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets

Item

http://www.wikidata.org/entity/Q36837974

description

2013 nî lūn-bûn

@nan

2013年の論文

@ja

2013年論文

@yue

2013年論文

@zh-hant

2013年論文

@zh-hk

2013年論文

@zh-mo

2013年論文

@zh-tw

2013年论文

@wuu

2013年论文

@zh

2013年论文

@zh-cn

name

Magnetization states of all-ox ...... dering of coupled ferromagnets

@en

type

Item

label

Magnetization states of all-ox ...... dering of coupled ferromagnets

@en

prefLabel

Magnetization states of all-ox ...... dering of coupled ferromagnets

@en

P1476

Magnetization states of all-ox ...... dering of coupled ferromagnets

@en

P2093

Han-Chun Wu

http://www.w3.org/2001/XMLSchema#string

Igor V Shvets

http://www.w3.org/2001/XMLSchema#string

Kevin Radican

http://www.w3.org/2001/XMLSchema#string

Mohamed Abid

http://www.w3.org/2001/XMLSchema#string

Oleg N Mryasov

http://www.w3.org/2001/XMLSchema#string

P2860

Long Range Charge Ordering in Magnetite Below the Verwey Transition

Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients

The emergence of spin electronics in data storage.

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers.

An emergent change of phase for electronics.

Solid-state memories based on ferroelectric tunnel junctions.

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.

Spin-torque diode effect in magnetic tunnel junctions.

Programmable computing with a single magnetoresistive element.

Temperature-induced reversal of magnetic interlayer exchange coupling.

P2888

srep01830

P304

1830

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/SREP01830

http://www.w3.org/2001/XMLSchema#string

P407

English

P478

http://www.w3.org/2001/XMLSchema#string

P577

2013-01-01T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

236691694

http://www.w3.org/2001/XMLSchema#string

P698

23665858

http://www.w3.org/2001/XMLSchema#string

P932

3652083

http://www.w3.org/2001/XMLSchema#string

Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets

about

P2860

P2860

Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P577

P5875

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P577

P5875

P698

P932