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Mapping Band Alignment across Complex Oxide HeterointerfacesTuning the formation and functionalities of ultrafine CoFe2O4 nanocrystals via interfacial coherent strain.Switchable scattering meta-surfaces for broadband terahertz modulation.High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors.Wafer-scale growth of VO2 thin films using a combinatorial approach.Phase transitions via selective elemental vacancy engineering in complex oxide thin films.Observation of a two-dimensional liquid of Fröhlich polarons at the bare SrTiO3 surface.Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnetsThermal stability of 2DEG at amorphous LaAlO3/crystalline SrTiO3 heterointerfacesStructure and properties of functional oxide thin films: insights from electronic-structure calculations.Ferromagnetic 1D oxide nanostructures grown from chemical solutions in confined geometries.Study of entropic characteristics of strongly correlated systems using VO2 as a model case.Magnetovolume effects in manganese nitrides with antiperovskite structure.Prospects of high-resolution resonant X-ray inelastic scattering studies on solid materials, liquids and gases at diffraction-limited storage rings.X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2.Limit of the electrostatic doping in two-dimensional electron gases of LaXO₃(X = Al, Ti)/SrTiO₃.Universal electric-field-driven resistive transition in narrow-gap Mott insulators.A persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film.Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface.Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature.Interface-induced multiferroism by design in complex oxide superlattices.Atomic-scale control of competing electronic phases in ultrathin LaNiO₃.Temperature dependence of long coherence times of oxide charge qubits.Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light.Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.High-performance programmable memory devices based on co-doped BaTiO3.A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure.Tuning the magnetic properties of self-assembled BiFeO3-CoFe2O4 heteroepitaxy by magneto-structural coupling.Identification of A- and B-site cation vacancy defects in perovskite oxide thin films.Evidence for a crucial role played by oxygen vacancies in LaMnO3 resistive switching memories.The flux dynamics behavior of the two competing high temperature superconducting phases in underdoped LaCuO4.06.Universal Fabrication of 2D Electron Systems in Functional Oxides.Microstructural, Magnetic, and Optical Properties of Pr-Doped Perovskite Manganite La0.67Ca0.33MnO3 Nanoparticles Synthesized via Sol-Gel Process.Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topologyEffects of biaxial stress and layer thickness on octahedral tilts in LaNiO3Electronic transitions in strained SmNiO3 thin filmsEvidence for impact ionization in vanadium dioxideHighly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayerHydrogen-Induced Surface Metallization ofSrTiO3(001)
P2860
Q27449460-5DAD0F46-C98A-442F-A814-2DCA73A55597Q31118721-B88E8C7D-86E8-4037-906D-C8A6AA825AFAQ33907048-32D215B6-AFE8-411C-9E6E-9DABDCBFE096Q35655767-F53E0329-FB72-426B-A261-2A86B45B6BAFQ35801214-27453D2B-D2F0-4128-A5EA-757FC597CDE6Q35976002-68346970-3D8A-40F6-8165-3ACEA8DCD1DCQ36265941-0E9EF3B3-8642-4883-AEE3-8059450A78AEQ36837974-6C55ECE5-9A5D-4705-BDDF-F4B89958E5D3Q37610345-0A43FCEE-7AB7-4057-9631-FD72D2071EAEQ37900259-EEC5C064-082A-402D-B4B8-F789D6520FDEQ38148948-154D22EA-B6F5-4AC3-9461-A7BA99CDB6CDQ39228218-D7C856D2-90EE-45EF-8C49-D47023D65CAFQ41646500-FB26504B-A27B-4F89-80F7-C70D062B4533Q42177179-26273EC9-3BCE-4BA0-94B4-C7B92654DAD4Q42228037-505060FE-34A6-4045-9B90-0DBA0D14A77CQ42961579-97CE8E3C-17DE-45DF-8DB6-31FB5060D819Q43524155-3CF86315-CF70-43B1-A60F-D6C411CB4A95Q43884025-C188BE1B-F0D2-4D80-BD74-2EDFE1326999Q44008270-60900FA6-92C5-4E12-8850-CA1D10FD9011Q44946151-8A78199C-A44F-43AD-BF2C-057220E7020AQ48025021-1A3EF97A-B4EC-4F48-9F2B-2967569C8CC1Q48320149-2C7D1AE1-778A-41F9-9EA0-9F7A9EBE0857Q50315755-9B72665D-FB6F-40C2-BF9F-67DDB65C28C1Q50766114-0484F22E-BFB2-4044-A33C-7DD51E83ACFFQ50866619-83414807-7984-4D8D-83F9-F20BD7CE5938Q50997779-7E648C28-54D9-4EF1-AD3C-E567B80FDE1AQ51017598-7D33D5A4-C9C8-4DAA-ABC1-8C7EA2AFC3B0Q51111409-D292D758-7554-45E1-BA89-5AF86B89F5FCQ51373725-5FB67A15-DC18-499B-AFE8-2CA1FDFE0607Q51613818-20F2508A-33AB-4559-9F7B-8690DB29D2DFQ53096032-EF084816-C6D1-41E4-900D-2711762A0511Q53136478-2D209B35-0409-4BCA-BADB-0C77E00D7CB6Q53325090-3BC68376-8626-4A5F-BE85-2D233D091495Q55243617-22B0FCD0-68AC-4FA4-B462-87AB3AF8E64BQ56002191-D57A2B29-522C-405F-94C7-D4FEAA324CCCQ56422849-CA2B8081-0E2C-496C-93ED-1010212B2642Q57391196-BCFD9E72-725B-427D-BFBD-B08D58028448Q57696344-BC59FC23-408C-4FF2-BBD1-EF7F34EE08B1Q57718026-3BBEFC58-F1A4-4D2B-B750-57485F56D67AQ57739265-27812AD9-8C4F-4853-9B49-E781C2C77B13
P2860
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh
2010年學術文章
@zh-hant
name
An emergent change of phase for electronics.
@en
An emergent change of phase for electronics.
@nl
type
label
An emergent change of phase for electronics.
@en
An emergent change of phase for electronics.
@nl
prefLabel
An emergent change of phase for electronics.
@en
An emergent change of phase for electronics.
@nl
P2860
P356
P1433
P1476
An emergent change of phase for electronics.
@en
P2093
Harold Y Hwang
P2860
P304
P356
10.1126/SCIENCE.1182541
P407
P577
2010-03-01T00:00:00Z