Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

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Impact of transient currents caused by alternating drain stress in oxide semiconductors.Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.

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Q41547956-7C466A2B-ACA4-4B8E-90FB-7F9F93229EC3 Q47168155-6A4FC55C-4D2C-453D-BAE7-8B9678C65C33

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Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

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http://www.wikidata.org/entity/Q37325435

description

article científic

@ca

article scientifique

@fr

articolo scientifico

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artigo científico

@pt

bilimsel makale

@tr

scientific article published on 11 October 2016

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vedecký článok

@sk

vetenskaplig artikel

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videnskabelig artikel

@da

vědecký článek

@cs

name

Electric Field-aided Selective ...... nc-Oxide Thin Film Transistors

@en

Electric Field-aided Selective ...... c-Oxide Thin Film Transistors.

@nl

type

Item

label

Electric Field-aided Selective ...... nc-Oxide Thin Film Transistors

@en

Electric Field-aided Selective ...... c-Oxide Thin Film Transistors.

@nl

prefLabel

Electric Field-aided Selective ...... nc-Oxide Thin Film Transistors

@en

Electric Field-aided Selective ...... c-Oxide Thin Film Transistors.

@nl

P1476

Electric Field-aided Selective ...... nc-Oxide Thin Film Transistors

@en

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Chan Bae Jeong

http://www.w3.org/2001/XMLSchema#string

Heesoo Lee

http://www.w3.org/2001/XMLSchema#string

Jeong Woo Park

http://www.w3.org/2001/XMLSchema#string

Jusung Chung

http://www.w3.org/2001/XMLSchema#string

Ki Soo Chang

http://www.w3.org/2001/XMLSchema#string

Tae Soo Jung

http://www.w3.org/2001/XMLSchema#string

Won-Gi Kim

http://www.w3.org/2001/XMLSchema#string

Young Jun Tak

http://www.w3.org/2001/XMLSchema#string

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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.

Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

Stretchable, large-area organic electronics.

Precise temperature mapping of GaN-based LEDs by quantitative infrared micro-thermography.

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.

User-interactive electronic skin for instantaneous pressure visualization.

Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering

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srep35044

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35044

http://www.w3.org/2001/XMLSchema#string

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scholarly article

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10.1038/SREP35044

http://www.w3.org/2001/XMLSchema#string

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English

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http://www.w3.org/2001/XMLSchema#string

P50

Hyun Jae Kim

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2016-10-11T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27725695

http://www.w3.org/2001/XMLSchema#string

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thin film

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5057139

http://www.w3.org/2001/XMLSchema#string

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

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P2860

P2860

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P921

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P921

P932