Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.
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Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.
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name
Electron-blocking by the poten ...... te in the oxide semiconductor.
@en
Electron-blocking by the poten ...... te in the oxide semiconductor.
@nl
type
label
Electron-blocking by the poten ...... te in the oxide semiconductor.
@en
Electron-blocking by the poten ...... te in the oxide semiconductor.
@nl
prefLabel
Electron-blocking by the poten ...... te in the oxide semiconductor.
@en
Electron-blocking by the poten ...... te in the oxide semiconductor.
@nl
P2860
P50
P1433
P1476
Electron-blocking by the poten ...... ate in the oxide semiconductor
@en
P2093
Jun Seo Kim
P2860
P2888
P356
10.1038/S41598-017-18420-9
P407
P577
2017-12-21T00:00:00Z