High performance bi-layer atomic switching devices.

about

High performance bi-layer atomic switching devices.

Item

http://www.wikidata.org/entity/Q38673299

description

2017 nî lūn-bûn

@nan

2017年の論文

@ja

2017年論文

@yue

2017年論文

@zh-hant

2017年論文

@zh-hk

2017年論文

@zh-mo

2017年論文

@zh-tw

2017年论文

@wuu

2017年论文

@zh

2017年论文

@zh-cn

name

High performance bi-layer atomic switching devices.

@en

type

Item

label

High performance bi-layer atomic switching devices.

@en

prefLabel

High performance bi-layer atomic switching devices.

@en

P1476

High performance bi-layer atomic switching devices.

@en

P2093

Hyeonje Son

http://www.w3.org/2001/XMLSchema#string

Jae Hyeok Ju

http://www.w3.org/2001/XMLSchema#string

Jin-Hong Park

http://www.w3.org/2001/XMLSchema#string

Sung Kyu Jang

http://www.w3.org/2001/XMLSchema#string

Sungjoo Lee

http://www.w3.org/2001/XMLSchema#string

P2860

Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

Atomic View of Filament Growth in Electrochemical Memristive Elements

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance.

Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices.

Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching.

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories.

Position detection and observation of a conducting filament hidden under a top electrode in a Ta₂O₅-based atomic switch.

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch.

Observation of conducting filament growth in nanoscale resistive memories.

P304

8373-8379

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1039/C7NR01035D

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P577

2017-06-08T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

28594423

http://www.w3.org/2001/XMLSchema#string

High performance bi-layer atomic switching devices.

about

High performance bi-layer atomic switching devices.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698