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Atomic View of Filament Growth in Electrochemical Memristive Elements

Atomic View of Filament Growth in Electrochemical Memristive Elements

http://www.wikidata.org/entity/Q35979189

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Conductance Quantization in Resistive Random Access Memory.Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.Electronic Conduction in Ti/Poly-TiO2/Ti Structures.High performance bi-layer atomic switching devices.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film.Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories.

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P2860

Atomic View of Filament Growth in Electrochemical Memristive Elements

http://www.wikidata.org/entity/Q35979189

description

2015 nî lūn-bûn

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2015年の論文

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2015年論文

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2015年論文

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2015年論文

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2015年論文

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2015年論文

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2015年论文

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2015年论文

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2015年论文

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Atomic View of Filament Growth in Electrochemical Memristive Elements

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Scientific Reports

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Atomic View of Filament Growth in Electrochemical Memristive Elements

@en

P2093

Haitao Sun

http://www.w3.org/2001/XMLSchema#string

Hangbing Lv

http://www.w3.org/2001/XMLSchema#string

Hongtao Liu

http://www.w3.org/2001/XMLSchema#string

Ling Li

http://www.w3.org/2001/XMLSchema#string

Ming Liu

http://www.w3.org/2001/XMLSchema#string

Pengxiao Sun

http://www.w3.org/2001/XMLSchema#string

Qi Liu

http://www.w3.org/2001/XMLSchema#string

Qing Luo

http://www.w3.org/2001/XMLSchema#string

Shibing Long

http://www.w3.org/2001/XMLSchema#string

Writam Banerjee

http://www.w3.org/2001/XMLSchema#string

P2860

Nanoionics-based resistive switching memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

A scalable neuristor built with Mott memristors.

A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

'Memristive' switches enable 'stateful' logic operations via material implication.

The missing memristor found.

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

Emerging memories: resistive switching mechanisms and current status.

Memristive devices for computing.

Switching kinetics of a Cu2S-based gap-type atomic switch.

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13311

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scholarly article

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10.1038/SREP13311

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5

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2015-08-21T00:00:00Z

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281121038

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1044920707

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26293982

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P921

electrochemistry

P932

4543950

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