Present status of amorphous In-Ga-Zn-O thin-film transistors.
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Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material.Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitalsConduction Threshold in Accumulation-Mode InGaZnO Thin Film TransistorsAnion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.High mobility and high stability glassy metal-oxynitride materials and devices.High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperatureArtificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors.Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power.Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate.Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor.Photoresist-free fully self-patterned transparent amorphous oxide thin-film transistors obtained by sol-gel process.Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity.Recent Progress in Materials and Devices toward Printable and Flexible Sensors.Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.Amorphous In-Ga-Zn-O Powder with High Gas Selectivity towards Wide Range Concentration of C₂H₅OH.Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits.The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.Impact of transient currents caused by alternating drain stress in oxide semiconductors.Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO₂ Thin-FilmA Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.Rare-metal-free high-performance Ga-Sn-O thin film transistorEntropy-limited topological protection of skyrmionsLarge-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen dopingElectron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.Structural convergence properties of amorphous InGaZnO4 from simulated liquid-quench methods.High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics.Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays.Highly hydrogen-sensitive thermal desorption spectroscopy system for quantitative analysis of low hydrogen concentration (∼1 × 1016 atoms/cm3) in thin-film samples.Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.
P2860
Q33683230-EC05E1F5-4823-4E15-A1BF-CCA9B77EC387Q34598272-18717116-AF71-4349-8F15-E2CB8FFA9A64Q36443210-6C0D327B-D519-4865-9F2C-574A6A50DEF9Q36638539-C428EA0F-2CC3-4E4F-BF81-B3B901B32298Q36685704-CC551BEE-A695-4907-A9A9-3AE4FE93FD4FQ36764893-537442FF-97B0-40B6-9D91-82328F836F69Q36841488-1A5A831C-AF1D-4585-A4E9-2567240E20B7Q37193160-2472C5FA-BE8A-4EDC-9763-8E7737834FEFQ37400047-D1C2A88F-F911-4E2A-B608-D08C8F286CBEQ37400242-39BB47B0-C279-4D25-946F-4D037C9BD8F8Q37493503-2B79CEE1-4386-453F-9C8B-D128EEAE77E5Q37494048-AEEB7677-AE95-4B8A-AD6D-1013F50CB6C6Q37676983-F96DBA22-249D-4841-B9AE-83AD79485C27Q37721760-A9287C03-BBDC-4672-8129-6E41D3DCDBBDQ38643122-3436EE4E-A790-4120-9553-4D151834B82DQ38647439-DE284064-67DD-4395-93B4-0F43F291D5B7Q38742896-1D99143D-1E08-4E6C-8A46-D19F484ACB3CQ39016342-EFACFBB0-845D-45EB-A0B3-ADE969ECF7B1Q40969504-436B73CA-FDAC-41A3-80B1-66004F4B8CD7Q40990137-1806A62F-2A6C-44CE-AA70-322222CFC040Q40992962-05AE59BF-21C5-44D0-8448-787719E4B6DFQ41050694-91B0ECA0-2DD2-4782-A4E3-BFD05DA3C2ACQ41366068-5F43D676-2D6B-4A6D-BF98-98F132EAA5E0Q41539553-A59C5DAF-A6C8-49B4-BC7F-52B538EFC7C2Q41547956-0149378D-2FDD-4BF5-A941-BC51E1B6EE6EQ42109828-54FB4AFC-1262-4C5F-BC38-15ED52AF7E99Q42151229-1403B92D-365A-4C95-9222-502B6BA1CBB5Q42226966-37B9E2CA-0061-4E32-9CAD-821ECFD33789Q42316576-882E0CB8-A36B-4B36-8945-A2C5AE163F92Q42367709-30BF1ACD-C24F-4637-A488-225522BA8911Q46088128-83AE6064-3DAC-4909-9233-2315DEAD45CEQ47037024-B95D7871-8E3D-4AA0-BE0E-F29D8EFFAE74Q47168155-6CB74A4C-8B45-48AA-9360-4F6674F880C4Q47722466-32C4B809-3CA9-469E-BBFA-023B2902D1A4Q47930530-5BE314D0-C49C-4911-8841-3A3BE7A2E3DDQ48316236-838C8EBF-A26F-4B9A-8BFC-088A33EC197BQ48785919-1221AA3A-B439-4CB7-A2BA-B835F18C5D60Q50781932-BEE15E63-155B-4B41-8540-902B77CF6EC5Q55023916-6385A460-26C8-4E25-9D85-753BCB5AB5D9Q55337268-FAEC0E24-9266-44C4-A547-B17638D3AE29
P2860
Present status of amorphous In-Ga-Zn-O thin-film transistors.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
2010年论文
@zh
2010年论文
@zh-cn
name
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@en
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@nl
type
label
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@en
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@nl
prefLabel
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@en
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@nl
P2860
P356
P1476
Present status of amorphous In-Ga-Zn-O thin-film transistors.
@en
P2093
Hideo Hosono
Kenji Nomura
P2860
P304
P356
10.1088/1468-6996/11/4/044305
P577
2010-08-01T00:00:00Z