Germanium Based Field-Effect Transistors: Challenges and Opportunities.
about
Synthesis and Characterization of Hexagonal Boron Nitride as a Gate DielectricUltra-doped n-type germanium thin films for sensing in the mid-infrared.Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel.Electrical Properties and Interfacial Studies of HfxTi1-xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.A first-principles study on the adsorption of ethylenediamine on Ge(100).Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)Spin-splitting in p-type Ge devices
P2860
Q28828928-EAEFE70A-BE1E-4B14-8E62-FAEF9D1BBFD8Q36990767-3E06C4D8-2DBF-4A10-9E4B-F8F9963A511CQ38775543-51E3057A-C366-42FB-BC4F-F337FE8223CFQ41760450-8EB0B132-2442-48CC-B545-ED0159A49D61Q42222265-CBAD1657-62A0-42FD-83D6-3A7A3D1B72B3Q53212378-ED75AD2F-05F9-4632-85AB-5A7CB6CF9788Q57641158-517C4A41-AB3D-4996-AD64-54E8AF26B850Q57722457-5AFCA38C-F6D4-4172-A3A4-411625864864
P2860
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@en
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@nl
type
label
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@en
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@nl
prefLabel
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@en
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@nl
P2860
P356
P1433
P1476
Germanium Based Field-Effect Transistors: Challenges and Opportunities.
@en
P2093
Mantu K Hudait
Patrick S Goley
P2860
P304
P356
10.3390/MA7032301
P577
2014-03-19T00:00:00Z