Academic and industry research progress in germanium nanodevices.
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate DielectricZintl Clusters as Wet-Chemical Precursors for Germanium Nanomorphologies with Tunable Composition.New avenues to an old material: controlled nanoscale doping of germanium.Bottom-up assembly of metallic germanium.Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculationsA self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnectsAntibacterial ability and hemocompatibility of graphene functionalized germanium.Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.Synthesis, properties and applications of colloidal germanium and germanium-based nanomaterials.RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.Emerging Applications for High K Materials in VLSI Technology.Germanium Based Field-Effect Transistors: Challenges and Opportunities.Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature.Next generation device grade silicon-germanium on insulator.Copper atomic-scale transistors.Dynamic annealing in Ge studied by pulsed ion beamsTetragermacyclobutadiene: energetically disfavored with respect to its structural isomers.High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices.Germanium nanocrystals as luminescent probes for rapid, sensitive and label-free detection of Fe3+ ions.DFT global optimisation of gas-phase and MgO-supported sub-nanometre AuPd clusters.Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap.A first-principles study on the adsorption of ethylenediamine on Ge(100).An IR modulator based on the self-assembly of gold nanoparticles on germanium.Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures.Improving carrier mobility of polycrystalline Ge by Sn dopingFlat transistor defies the limitOptimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulationsAtomic layer doping of strained Ge-on-insulator thin films with high electron densitiesElectronic structure of phosphorus and arsenicδ-doped germaniumn-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic LevelPhase formation and texture of thin nickel germanides on Ge(001) and Ge(111)Texture in thin film silicides and germanides: A reviewSpin-splitting in p-type Ge devicesSize Controlled Synthesis of Germanium Nanocrystals: Effect of Ge Precursor and Hydride Reducing Agent
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Academic and industry research progress in germanium nanodevices.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
2011年论文
@zh
2011年论文
@zh-cn
name
Academic and industry research progress in germanium nanodevices.
@en
Academic and industry research progress in germanium nanodevices.
@nl
type
label
Academic and industry research progress in germanium nanodevices.
@en
Academic and industry research progress in germanium nanodevices.
@nl
prefLabel
Academic and industry research progress in germanium nanodevices.
@en
Academic and industry research progress in germanium nanodevices.
@nl
P356
P1433
P1476
Academic and industry research progress in germanium nanodevices.
@en
P2093
Ravi Pillarisetty
P2888
P304
P356
10.1038/NATURE10678
P407
P577
2011-11-16T00:00:00Z
P6179
1032804940