about
Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology.Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires.High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates.Engineering the Photoresponse of InAs Nanowires.Growth of straight InAs-on-GaAs nanowire heterostructures.Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays.Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.Understanding the true shape of Au-catalyzed GaAs nanowires.Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.Nanoindentation-induced deformation of GeSpherical indentation of compound semiconductorsThe effect of nitridation on the polarity and optical properties of GaN self-assembled nanorodsTwinning Superlattice Formation in GaAs NanowiresEffects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectorsInfluence of Interface Morphology on Hysteresis in Vapor-Deposited Perovskite Solar CellsMeasuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopyDopant effects on the photoluminescence of interstitial-related centers in ion implanted siliconEffect of boron on formation of interstitial-related luminescence centres in ion implanted siliconEffect of boron on interstitial-related luminescence centers in siliconPerovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen GenerationComparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputteringSuppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layerZn precipitation and Li depletion in Zn implanted ZnOEquilibrium shape of nano-cavities in H implanted ZnOEffects of high temperature annealing on defects and luminescence properties in H implanted ZnOSidewall evolution in VLS grown GaAs nanowiresProbing the critical electronic properties of III–V nanowires using optical pump-terahertz probe spectroscopyElectron-pinned defect-dipoles for high-performance colossal permittivity materialsElectronic comparison of InAs wurtzite and zincblende phases using nanowire transistorsAnderson-like localization in ultrathin nanocomposite alloy films on polymeric substratesMn Implantation for New Applications of 4H-SiCAcceptor-like deep level defects in ion-implanted ZnODirect correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
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P50
description
hulumtuese
@sq
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Jennifer Wong-Leung
@ast
Jennifer Wong-Leung
@en
Jennifer Wong-Leung
@es
Jennifer Wong-Leung
@nl
Jennifer Wong-Leung
@sl
type
label
Jennifer Wong-Leung
@ast
Jennifer Wong-Leung
@en
Jennifer Wong-Leung
@es
Jennifer Wong-Leung
@nl
Jennifer Wong-Leung
@sl
prefLabel
Jennifer Wong-Leung
@ast
Jennifer Wong-Leung
@en
Jennifer Wong-Leung
@es
Jennifer Wong-Leung
@nl
Jennifer Wong-Leung
@sl
P1053
B-9007-2011
P106
P21
P31
P3829
P3835
jenny-wong-leung
P496
0000-0002-5050-4202