Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Interface dynamics and crystal phase switching in GaAs nanowires.Y-shaped ZnO Nanobelts Driven from Twinned Dislocations Polarity and growth directions in Sn-seeded GaSb nanowires.

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Q27314671-0DD5EB00-8626-425F-94DE-50F108F11513 Q36638601-2567187F-887D-481F-8E5E-EADD40C45F44 Q48216112-81D9A358-A0F1-4A61-99FD-C274B2C4D739

P2860

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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2015 nî lūn-bûn

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2015年の論文

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2015年学术文章

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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P1476

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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P2093

Xiaoming Yuan

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P2860

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.

Solid-phase diffusion mechanism for GaAs nanowire growth.

Free-standing kinked nanowire transistor probes for targeted intracellular recording in three dimensions.

Three-dimensional, flexible nanoscale field-effect transistors as localized bioprobes

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors.

Synthesis and properties of antimonide nanowires.

Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.

Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.

Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.

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6096-6103

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

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10.1002/ADMA.201503540

http://www.w3.org/2001/XMLSchema#string

P407

English

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http://www.w3.org/2001/XMLSchema#string

P478

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P50

P577

2015-09-17T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

281860953

http://www.w3.org/2001/XMLSchema#string

P698

26378989

http://www.w3.org/2001/XMLSchema#string

P921

nanowire

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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P2860

P2860

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

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name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698

P921

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P5875

P698

P921