about
Local and anisotropic excitation of surface plasmon polaritons by semiconductor nanowires.Probing strain in bent semiconductor nanowires with Raman spectroscopy.Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscopeFIB plan and side view cross-sectional TEM sample preparation of nanostructures.Photon upconversion in degenerately sulfur doped InP nanowires.Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates.Absorption and transmission of light in III-V nanowire arrays for tandem solar cell applications.Electron trapping in InP nanowire FETs with stacking faults.A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.Zinc incorporation via the vapor-liquid-solid mechanism into InP nanowires.Doping evaluation of InP nanowires for tandem junction solar cells.In situ characterization of nanowire dimensions and growth dynamics by optical reflectance.A comparative study of absorption in vertically and laterally oriented InP core-shell nanowire photovoltaic devices.Ground State Depletion Nanoscopy Resolves Semiconductor Nanowire Barcode Segments at Room Temperature.Structural investigation of GaInP nanowires using X-ray diffraction.Translocation of 40 nm diameter nanowires through the intestinal epithelium of Daphnia magna.InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit.Optical far-field method with subwavelength accuracy for the determination of nanostructure dimensions in large-area samples.Fluorescent nanowire heterostructures as a versatile tool for biology applications.Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors.Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.Electrical and optical properties of InP nanowire ensemble p⁺-i-n⁺ photodetectors.Growth parameter design for homogeneous material composition in ternary Ga(x)In(1-x)P nanowires.Twinning superlattices in indium phosphide nanowires.Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared.Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate.Synergetic nanowire growth.Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes.Optimization of Current Injection in AlGaInP Core-Shell Nanowire Light-Emitting Diodes.Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.Bias-dependent spectral tuning in InP nanowire-based photodetectors.InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc.Carrier Recombination Processes in Gallium Indium Phosphide Nanowires.Bending and Twisting Lattice Tilt in Strained Core-Shell Nanowires Revealed by Nanofocused X-ray Diffraction.Cellular traction forces: a useful parameter in cancer research.Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System.
P50
Q33342103-663915A6-ED4F-4417-9E38-727FD740573DQ33535328-5873D77A-B6BB-439B-87C0-E6C0694F335FQ34995410-D578F51E-7B42-4C54-99B5-076C560CC9D6Q35042809-F8088128-3AFE-4A48-9B2E-3BB129B660A7Q35846433-600A64AD-2DE8-484D-AB23-05C29A874FDDQ38732437-63977D77-FAF5-4E98-963A-C1DD1B27474DQ38823572-C4D3BF03-A82E-4579-B8D2-16FF3541D2A4Q39678130-89BA7423-D586-44AC-B105-C8CB35439334Q39716761-C8A7AE18-2AC5-4CEA-A50C-5E947FF0F8E1Q39900506-4F8677C0-2BC2-4204-A585-3E578CE458C9Q39995638-7E301AF3-D201-49DE-B8E8-95A07C729D3BQ40112403-79EAC801-2B13-4A08-8020-35358AFE6437Q41166118-C1887B30-237C-4B26-BA32-E791B1F8A79FQ41450705-586B9584-AB5B-480E-BB3E-54233933F100Q41808940-C6375849-71B1-4E94-B8BF-235C7D063B01Q41996655-08E18F3D-B509-40D1-B9CD-70F8DA7527AEQ42000359-34F24BCF-3EBE-4CDE-AE46-106997CD98EAQ44629622-E853AF57-F054-4CD3-8426-8EE81DF2F941Q45209024-CA6250F4-9B88-4200-807C-2E72AC27A483Q45215235-83D98772-2E10-4512-A189-03B4734DF251Q45365602-EBF0A607-3D82-4EC1-96B6-120CAE158E8EQ45927505-FC6B8248-AF09-49DC-AC8A-5DB7F33D1454Q46186584-E6BD1E7C-99C0-4E1D-9712-97EF02ED7303Q46217121-A2E2346B-BEAA-49B4-B4B9-84F71AC9B777Q46629369-6274001F-C2FF-4BC3-B904-12CD6FD5706FQ46658448-B89C8BFD-9CD9-4B32-A830-F0B8E0361625Q47227243-EC42CEF1-52B1-4FEE-9EC7-6C81AA3EE532Q47235572-E0FFDAA9-D8CF-451F-9933-573CE53A42A2Q47395434-F2F63F88-E6AE-4690-8E73-DCA46C2590C4Q47432248-21E6070C-ACF9-4852-B974-06420DB617E9Q47599384-63B69CBA-8116-4E09-952F-8337DBB22497Q47834763-E00E0C40-869B-4D74-81E3-0676468EF273Q47834902-33780545-0B67-4B1D-ABC2-159F992CB098Q47968257-58F39361-BC9B-419A-8535-D1F195F69870Q48050526-0E60A52C-C60E-4BDE-B9E8-AB8BCD99A67EQ48216505-59F5B1DE-8535-4DBB-AEF5-0BA2DC9BA1F5Q48278399-963B0330-AF8E-4B01-87ED-89C343C18E14Q49503892-31D32501-E0CD-475B-85BD-6DCDDB956BC0Q50277400-50C460AA-3404-4B79-81E9-220D100D944DQ50433593-5946DE1E-8AEE-41C6-8E62-87CA19DB3577
P50
description
Zweeds onderzoeker
@nl
hulumtues
@sq
researcher
@en
taighdeoir
@ga
հետազոտող
@hy
name
Magnus T Borgström
@ast
Magnus T Borgström
@en
Magnus T Borgström
@es
Magnus T Borgström
@ga
Magnus T Borgström
@nl
Magnus T Borgström
@sl
Magnus T Borgström
@sq
type
label
Magnus T Borgström
@ast
Magnus T Borgström
@en
Magnus T Borgström
@es
Magnus T Borgström
@ga
Magnus T Borgström
@nl
Magnus T Borgström
@sl
Magnus T Borgström
@sq
prefLabel
Magnus T Borgström
@ast
Magnus T Borgström
@en
Magnus T Borgström
@es
Magnus T Borgström
@ga
Magnus T Borgström
@nl
Magnus T Borgström
@sl
Magnus T Borgström
@sq
P1053
B-2237-2008
P106
P108
P21
P27
P31
P3829
P496
0000-0001-8061-0746