Growth parameter design for homogeneous material composition in ternary Ga(x)In(1-x)P nanowires.
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Ground State Depletion Nanoscopy Resolves Semiconductor Nanowire Barcode Segments at Room Temperature.Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxyStrategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
P2860
Growth parameter design for homogeneous material composition in ternary Ga(x)In(1-x)P nanowires.
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Growth parameter design for homogeneous material composition in ternary Ga
@nl
Growth parameter design for ho ...... rnary Ga(x)In(1-x)P nanowires.
@en
type
label
Growth parameter design for homogeneous material composition in ternary Ga
@nl
Growth parameter design for ho ...... rnary Ga(x)In(1-x)P nanowires.
@en
prefLabel
Growth parameter design for homogeneous material composition in ternary Ga
@nl
Growth parameter design for ho ...... rnary Ga(x)In(1-x)P nanowires.
@en
P50
P356
P1433
P1476
Growth parameter design for ho ...... ernary Ga(x)In(1-x)P nanowires
@en
P2093
Alexander Berg
Filip Lenrick
P304
P356
10.1088/0957-4484/26/43/435601
P577
2015-10-07T00:00:00Z