about
Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials.High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus.Chemical doping of MoS2 multilayer by p-toluene sulfonic acidTuning thermal conductivity in molybdenum disulfide by electrochemical intercalation.Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications.Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.A microprocessor based on a two-dimensional semiconductorAdsorption of gas molecules on monolayer MoS2 and effect of applied electric field.A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics.Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomoleculesUltimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfideProbing the role of interlayer coupling and coulomb interactions on electronic structure in few-layer MoSe₂ nanostructures.Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics.Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate.Highly responsive MoS2 photodetectors enhanced by graphene quantum dots.Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers.Revealing silent vibration modes of nanomaterials by detecting anti-Stokes hyper-Raman scattering with femtosecond laser pulses.Threshold Dependence of Deep- and Near-subwavelength Ripples Formation on Natural MoS2 Induced by Femtosecond Laser.The growth scale and kinetics of WS2 monolayers under varying H2 concentrationFlexible transition metal dichalcogenide nanosheets for band-selective photodetectionMetal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates.Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors.MoS2 Surface Structure Tailoring via Carbonaceous Promoter.Ultrafast Optical Microscopy of Single Monolayer Molybdenum Disulfide Flakes.High-Concentration Aqueous Dispersions of Nanoscale 2D Materials Using Nonionic, Biocompatible Block CopolymersLow-temperature growth of layered molybdenum disulphide with controlled clusters.Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.Selective decoration of Au nanoparticles on monolayer MoS2 single crystals.Polarity control in WSe2 double-gate transistors.Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructuresInfluence of curvature strain and Van der Waals force on the inter-layer vibration mode of WS2 nanotubes: A confocal micro-Raman spectroscopic study.
P2860
Q27320951-85CB8143-A771-43AD-889E-960AE25C2DD8Q27336168-0AAF19A3-979E-482B-8268-F8029F2947C7Q28244279-9976DF46-3444-4C52-B299-00139579B70FQ28821896-8030C36F-9D63-494B-AD58-53A12710BF4EQ30370776-EDA08338-D079-4953-935E-40CB7B45DE7BQ30397762-B29E2C28-7500-4E03-AA2C-431F69D02A7EQ30423387-934C1A39-2CC8-4A03-B835-499E31C9F8B0Q30801159-E3E45255-E1AA-469A-B757-22F3D4C0A018Q33571900-C1697BB4-59C4-4637-8882-02A5EC4153C6Q33588776-DB9D5BE1-3B37-46CC-8F88-51849020C65CQ33708118-E570FE2F-2259-4B90-A2C8-C6CB3D88B917Q33850950-77633D0F-C9C9-4E71-B392-0D3674E8DEA5Q34023365-BDBFCD79-9E6C-4344-AE60-D1D8A7AE18DBQ34429861-CE333D3D-BED5-42D4-9FB9-3215412DDD74Q34598272-3C799B0B-95F9-48C2-85DD-80CDC67DDFF5Q34719698-5004C202-796F-4B22-85B8-ACD548747AECQ35247097-5C968B27-E91B-41B8-8F8D-5327AB1BDD21Q35555165-7E9B878D-6F21-4671-AC29-1BD6DEF035F7Q35608885-A1243B1E-165B-4B5D-909E-0FFCBF0A3421Q35650953-6DB14479-C402-4E48-9DE5-F28AD6A2E3C7Q35676618-BDDC59B3-7FD1-48A4-B6C7-7467AC096A79Q35813440-7B676D59-8FEE-47CF-9C83-7C36ADF56BC6Q35841317-31855120-D292-4B35-8EEA-5CE014E183A8Q35856173-FE942989-8D94-4D7B-B32A-2EB46C1B1B92Q35874606-9E4CFB93-9A2B-43A4-AB1C-CCD992B45956Q35900157-EC317BF2-C831-46D7-A8DD-2C5D1A683FFFQ35961476-57154290-5082-4EA7-A891-DF6BBB76F9A1Q36059313-E992FB21-235E-4ED6-AA7E-E7E8CA5960BDQ36252306-9F53FC64-7D16-40E5-AD08-A0EC2017FDC3Q36293567-1F98F6BE-76C3-4EE4-8B00-A72BE0C1474CQ36294109-0D7EADBA-4049-4186-892F-17FC95C7877CQ36579682-8635D092-49FD-426F-9F9A-18E5BE789351Q36586518-1306F060-7FFE-4EE8-89D8-CD1677F643E5Q36605774-327B974D-6519-4E9A-9F41-7EC401E12FA4Q36633376-8EE25EF4-D9B4-40BE-9FA4-51ADBB0DD424Q36841294-42A30F08-DC14-480D-9E39-433319D03EE1Q37076691-423D3267-DBD6-41AE-A079-B5C7E5201731Q37153886-171F9AF1-B00F-4449-AACB-C427DE269BACQ37177482-CD8F09E9-AC34-473B-B62B-9BF3C103D9D4Q37251557-C072A2A1-A6DC-4A93-BF20-8A0CE7E30E1E
P2860
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
2012年论文
@zh
2012年论文
@zh-cn
name
Integrated circuits based on bilayer MoS₂ transistors.
@en
type
label
Integrated circuits based on bilayer MoS₂ transistors.
@en
prefLabel
Integrated circuits based on bilayer MoS₂ transistors.
@en
P2093
P50
P356
P1433
P1476
Integrated circuits based on bilayer MoS₂ transistors.
@en
P2093
Madan Dubey
Matthew L Chin
Tomas Palacios
Yi-Hsien Lee
P304
P356
10.1021/NL302015V
P407
P577
2012-08-10T00:00:00Z