Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
about
Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3.A new 2D monolayer BiXene, M2C (M = Mo, Tc, Os).A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties.Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2.Nonlinear Saturable and Polarization-induced Absorption of Rhenium Disulfide.The In-Plane Anisotropy of WTe2 Investigated by Angle-Dependent and Polarized Raman Spectroscopy.Disorder engineering and conductivity dome in ReS2 with electrolyte gating.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Design principles for shift current photovoltaics.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Highly Anisotropic Sb2 Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure.Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2.Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy.Probing the crystallographic orientation of two-dimensional atomic crystals with supramolecular self-assemblyElectronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.Synthesis of Large-Size 1T' ReS2x Se2(1-x) Alloy Monolayer with Tunable Bandgap and Carrier Type.A study on the electronic and interfacial structures of monolayer ReS2-metal contacts.Atomic Layer Deposition of Rhenium Disulfide.Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2.Tuning the electronic properties of monolayer and bilayer transition metal dichalcogenide compounds under direct out-of-plane compression.A two-dimensional tetragonal yttrium nitride monolayer: a ferroelastic semiconductor with switchable anisotropic properties.Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x) Se2x Alloys with Distorted 1T Structure.Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application.Chemical Vapor Deposition of High-Quality and Atomically Layered ReS₂.Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness DeterminationTwo-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cellsUltrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals EpitaxyRhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs familyReS2-based interlayer tunnel field effect transistorPhase Modulators Based on High Mobility Ambipolar ReSe Field-Effect Transistors
P2860
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P2860
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Integrated digital inverters b ...... ReS2 field-effect transistors.
@ast
Integrated digital inverters b ...... ReS2 field-effect transistors.
@en
type
label
Integrated digital inverters b ...... ReS2 field-effect transistors.
@ast
Integrated digital inverters b ...... ReS2 field-effect transistors.
@en
prefLabel
Integrated digital inverters b ...... ReS2 field-effect transistors.
@ast
Integrated digital inverters b ...... ReS2 field-effect transistors.
@en
P2093
P2860
P50
P356
P1476
Integrated digital inverters b ...... ReS2 field-effect transistors
@en
P2093
Baigeng Wang
Dingyu Xing
Fengqi Song
Harold Y Hwang
Hongtao Yuan
Huimei Liu
Junwen Zeng
Laiguo Wang
P2860
P2888
P356
10.1038/NCOMMS7991
P407
P577
2015-05-07T00:00:00Z
P5875
P698
P818
1503.02374