Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.

Item
http://www.wikidata.org/entity/Q40336802
MoS2 memristor with photoresistive switching.Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse OffsetStructure Re-determination and Superconductivity Observation of Bulk 1T MoS2.Vacancy-Driven Gelation Using Defect-Rich Nanoassemblies of 2D Transition Metal Dichalcogenides and Polymeric Binder for Biomedical Applications.Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition.Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.Composition- and phase-controlled synthesis and applications of alloyed phase heterostructures of transition metal disulphides.Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron NitrideTwo-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells
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Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.

Item
http://www.wikidata.org/entity/Q40336802
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
@en
type
label
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
@en
prefLabel
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
@en
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P1476
P2093
P304
P31
P356
P407
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P478
P577
P698
P356
P1433
P1476
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.
@en
P2093
P304
P31
P356
10.1021/ACS.NANOLETT.5B04260
P407
P433
P478
P577
P698