Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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2018 nî lūn-bûn

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2018年の論文

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年學術文章

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2018年學術文章

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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Item

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

@en

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

@en

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

@nl

P1476

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

@en

P2093

Aleksey Shmeliov

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Clive Downing

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Conor P Cullen

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Eamonn Weitz

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Yangbo Zhou

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P2860

Multibit data storage states formed in plasma-treated MoS₂ transistors.

Single-layer MoS2 transistors.

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides.

Electrical Transport Properties of Polymorphic MoS2.

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

Where does the current flow in two-dimensional layered systems?

Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma.

Single-layer MoS2 electronics.

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets.

P304

eaao5031

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P31

scholarly article

P356

10.1126/SCIADV.AAO5031

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P433

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P478

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P50

P577

2018-03-02T00:00:00Z

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P698

29511736

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P818

1706.08573

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P932

5837433

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