about
Switchable friction enabled by nanoscale self-assembly on graphene.Insight into a natural Diels-Alder reaction from the structure of macrophomate synthaseElectron optics with p-n junctions in ballistic graphene.High thermoelectricpower factor in graphene/hBN devices.Thermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling SpectroscopyAbsorptive pinhole collimators for ballistic Dirac fermions in graphene.Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics.Hot carrier-assisted intrinsic photoresponse in graphene.Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.Edge currents shunt the insulating bulk in gapped grapheneDeep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells.Pressure-induced commensurate stacking of graphene on boron nitride.Imaging and tuning molecular levels at the surface of a gated graphene device.Mechanical properties of atomically thin boron nitride and the role of interlayer interactionsBallistic superconductivity in semiconductor nanowiresBoron nitride substrates for high-quality graphene electronics.Giant nonlocality near the Dirac point in graphene.Bilayer graphene. Electron-hole asymmetric integer and fractional quantum Hall effect in bilayer graphene.Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene.Observation of the Dirac fluid and the breakdown of the Wiedemann-Franz law in graphene.Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.A high-mobility electronic system at an electrolyte-gated oxide surface.Physics. Creating and probing electron whispering-gallery modes in graphene.Large Variations of the Raman Signal in the Spectra of Twisted Bilayer Graphene on a BN Substrate.Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions.Raman spectroscopy as probe of nanometre-scale strain variations in graphene.Imaging Cyclotron Orbits of Electrons in Graphene.Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride.Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb ImpuritiesImaging of Anomalous Internal Reflections of Hyperbolic Phonon-Polaritons in Hexagonal Boron Nitride.Tuning charge and correlation effects for a single molecule on a graphene deviceUltrahigh-mobility graphene devices from chemical vapor deposition on reusable copper.Enabling valley selective exciton scattering in monolayer WSe2 through upconversionMolecular Self-Assembly in a Poorly Screened Environment: F4TCNQ on Graphene/BN.Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.Near-field photocurrent nanoscopy on bare and encapsulated graphene.
P50
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P50
description
hulumtues
@sq
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Kenji Watanabe
@ast
Kenji Watanabe
@en
Kenji Watanabe
@es
Kenji Watanabe
@sl
type
label
Kenji Watanabe
@ast
Kenji Watanabe
@en
Kenji Watanabe
@es
Kenji Watanabe
@sl
altLabel
hexagonal boron nitride
@en
prefLabel
Kenji Watanabe
@ast
Kenji Watanabe
@en
Kenji Watanabe
@es
Kenji Watanabe
@sl
P1053
H-2825-2011
P106
P21
P31
P3829
P496
0000-0003-3701-8119
P569
2000-01-01T00:00:00Z