Boron nitride substrates for high-quality graphene electronics.
about
Resonant tunnelling and negative differential conductance in graphene transistors.The hot pick-up technique for batch assembly of van der Waals heterostructures.Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets.Switchable friction enabled by nanoscale self-assembly on graphene.Automated circuit fabrication and direct characterization of carbon nanotube vibrationsAutomatic graphene transfer system for improved material quality and efficiency.Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives.Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer depositionControllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related ApplicationsLarge-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN waferHexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam EpitaxySynthesis and Characterization of Hexagonal Boron Nitride as a Gate DielectricPMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer MethodHofstadter’s butterfly and the fractal quantum Hall effect in moiré superlatticesElectron optics with p-n junctions in ballistic graphene.High thermoelectricpower factor in graphene/hBN devices.Highly sensitive and wide-band tunable terahertz response of plasma waves based on graphene field effect transistors.Thermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.Thermal transport and anharmonic phonons in strained monolayer hexagonal boron nitride.Transfer of monolayer TMD WS2 and Raman study of substrate effects.Silicon-graphene conductive photodetector with ultra-high responsivity.Photo-thermionic effect in vertical graphene heterostructures.Microscopic origins of the terahertz carrier relaxation and cooling dynamics in graphene.Superior thermal conductivity in suspended bilayer hexagonal boron nitride.Unusual dimensionality effects and surface charge density in 2D Mg(OH)2.Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling SpectroscopyOn-chip picosecond pulse detection and generation using graphene photoconductive switchesSub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.Biaxial compressive strain engineering in graphene/boron nitride heterostructures.Graphite flake self-retraction response based on potential seeking.Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.Absorptive pinhole collimators for ballistic Dirac fermions in graphene.High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures.Solution-processed titanium carbide MXene films examined as highly transparent conductors.Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates.Growth kinetics of white graphene (h-BN) on a planarised Ni foil surface.Single-layer nanosheets with exceptionally high and anisotropic hydroxyl ion conductivity.
P2860
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P2860
Boron nitride substrates for high-quality graphene electronics.
description
2010 nî lūn-bûn
@nan
2010 թուականի Օգոստոսին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի օգոստոսին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Boron nitride substrates for high-quality graphene electronics.
@ast
Boron nitride substrates for high-quality graphene electronics.
@en
Boron nitride substrates for high-quality graphene electronics.
@nl
type
label
Boron nitride substrates for high-quality graphene electronics.
@ast
Boron nitride substrates for high-quality graphene electronics.
@en
Boron nitride substrates for high-quality graphene electronics.
@nl
prefLabel
Boron nitride substrates for high-quality graphene electronics.
@ast
Boron nitride substrates for high-quality graphene electronics.
@en
Boron nitride substrates for high-quality graphene electronics.
@nl
P2093
P50
P356
P1476
Boron nitride substrates for high-quality graphene electronics
@en
P2093
K L Shepard
S Sorgenfrei
T Taniguchi
P2888
P304
P356
10.1038/NNANO.2010.172
P407
P577
2010-08-22T00:00:00Z
P5875
P6179
1018587379