High-speed graphene transistors with a self-aligned nanowire gate.
about
Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale.High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus.Chemical doping of MoS2 multilayer by p-toluene sulfonic acidThe Interaction of Radio-Frequency Fields With Dielectric Materials at Macroscopic to Mesoscopic ScalesSub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope.On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressureA systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.Wafer-scale graphene integrated circuit.Graphene-based nanoresonator with applications in optical transistor and mass sensingModulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation.Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary invertersFew-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials.Stacked graphene-Al2O3 nanopore sensors for sensitive detection of DNA and DNA-protein complexes.A highly efficient thermo-optic microring modulator assisted by graphene.Graphene mobility mappingTunable Fermi level and hedgehog spin texture in gapped graphene.Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement.High-frequency self-aligned graphene transistors with transferred gate stacksQuantum capacitance in topological insulatorsGraphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors.Tunable transport gap in narrow bilayer graphene nanoribbons.Phase Conjugated and Transparent Wavelength Conversions of Nyquist 16-QAM Signals Employing a Single-Layer Graphene Coated Fiber DeviceImproved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.Flat-Lens Focusing of Electron Beams in Graphene.Coalescence of Immiscible Liquid Metal Drop on GrapheneDeep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.All-graphene planar self-switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes.Finding Stable Graphene Conformations from Pull and Release Experiments with Molecular Dynamics.New materials graphyne, graphdiyne, graphone, and graphane: review of properties, synthesis, and application in nanotechnologyMagnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe.Negative differential resistance and bias-modulated metal-to-insulator transition in zigzag C2N-h2D nanoribbon.Aspects of the theory of graphene.Engineering the electronic structure of graphene.Graphene-based flexible and stretchable thin film transistors.Graphene: an emerging electronic material.Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.Strongly coupled inorganic-nano-carbon hybrid materials for energy storage.25th anniversary article: metal oxide particles in materials science: addressing all length scales.
P2860
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P2860
High-speed graphene transistors with a self-aligned nanowire gate.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
2010年论文
@zh
2010年论文
@zh-cn
name
High-speed graphene transistors with a self-aligned nanowire gate.
@en
type
label
High-speed graphene transistors with a self-aligned nanowire gate.
@en
prefLabel
High-speed graphene transistors with a self-aligned nanowire gate.
@en
P2093
P2860
P356
P1433
P1476
High-speed graphene transistors with a self-aligned nanowire gate.
@en
P2093
Jingwei Bai
Kang L Wang
Mingqiang Bao
Yongquan Qu
Yung-Chen Lin
P2860
P2888
P304
P356
10.1038/NATURE09405
P407
P577
2010-09-01T00:00:00Z
P5875
P6179
1027275519