Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
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Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@en
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@nl
type
label
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@en
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@nl
prefLabel
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@en
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@nl
P356
P1433
P1476
Effects of Asymmetric Quantum ...... N-Based Light-Emitting Diodes.
@en
P2093
Chia-Lung Tsai
Wei-Che Wu
P2860
P304
P356
10.3390/MA7053758
P577
2014-05-12T00:00:00Z