Point contact resistive switching memory based on self-formed interface of Al/ITO.

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Point contact resistive switching memory based on self-formed interface of Al/ITO.

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http://www.wikidata.org/entity/Q42429617

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2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年論文

@yue

2016年論文

@zh-hant

2016年論文

@zh-hk

2016年論文

@zh-mo

2016年論文

@zh-tw

2016年论文

@wuu

2016年论文

@zh

2016年论文

@zh-cn

name

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@en

Point contact resistive switching memory based on self-formed interface of Al/ITO.

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label

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@en

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@nl

prefLabel

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@en

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@nl

P1476

Point contact resistive switching memory based on self-formed interface of Al/ITO.

@en

P2093

Bo Dai

http://www.w3.org/2001/XMLSchema#string

Huizhong Zeng

http://www.w3.org/2001/XMLSchema#string

Linjun Qiu

http://www.w3.org/2001/XMLSchema#string

Qiuhong Li

http://www.w3.org/2001/XMLSchema#string

Xianhua Wei

http://www.w3.org/2001/XMLSchema#string

P2860

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

Emerging memories: resistive switching mechanisms and current status.

Nanoscale resistive switching devices: mechanisms and modeling.

Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure.

Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

P2888

srep29347

P304

29347

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/SREP29347

http://www.w3.org/2001/XMLSchema#string

P407

English

P478

http://www.w3.org/2001/XMLSchema#string

P577

2016-07-07T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27383005

http://www.w3.org/2001/XMLSchema#string

P932

4935939

http://www.w3.org/2001/XMLSchema#string