Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
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Optical Characterization of Strong UV Luminescence Emitted from the Excitonic Edge of Nickel Oxide Nanotowers.Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.Robust electric-field tunable opto-electrical behavior in Pt-NiO-Pt planar structuresResistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure.Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.Point contact resistive switching memory based on self-formed interface of Al/ITO.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Switchable Cu2O/WOx p–n junction for high density crossbar arrays
P2860
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P2860
Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.
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2012 nî lūn-bûn
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2012年の論文
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2012年学术文章
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2012年学术文章
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name
Deterministic conversion betwe ...... e strong electron correlation.
@ast
Deterministic conversion betwe ...... e strong electron correlation.
@en
type
label
Deterministic conversion betwe ...... e strong electron correlation.
@ast
Deterministic conversion betwe ...... e strong electron correlation.
@en
prefLabel
Deterministic conversion betwe ...... e strong electron correlation.
@ast
Deterministic conversion betwe ...... e strong electron correlation.
@en
P2093
P2860
P356
P1433
P1476
Deterministic conversion betwe ...... he strong electron correlation
@en
P2093
Hai Yang Peng
Wei Nan Lin
Xing Yu Gao
Yu Zhan Wang
P2860
P2888
P356
10.1038/SREP00442
P407
P577
2012-06-07T00:00:00Z