Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
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Universality and critical behavior of the dynamical Mott transition in a system with long-range interactions.Multiferroicity and skyrmions carrying electric polarization in GaV4S8Manganite-based memristive heterojunction with tunable non-linear I-V characteristics.Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS NanodevicesElectrical Switching in Thin Film Structures Based on Transition Metal OxidesOn the multiferroic skyrmion-host GaV4S8Structural, magnetic, electric, dielectric, and thermodynamic properties of multiferroic GeV4S8
P2860
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P2860
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
description
2013 nî lūn-bûn
@nan
2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
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2013年学术文章
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2013年学术文章
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2013年學術文章
@yue
2013年學術文章
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2013年學術文章
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name
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@en
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@nl
type
label
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@en
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@nl
prefLabel
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@en
Universal electric-field-driven resistive transition in narrow-gap Mott insulators.
@nl
P2093
P2860
P356
P1433
P1476
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
@en
P2093
Benoit Corraze
Catherine Guillot-Deudon
Julien Tranchant
Laurent Cario
Marcelo Rozenberg
Pablo Stoliar
Sabrina Salmon-Bourmand
Vincent Guiot
P2860
P304
P356
10.1002/ADMA.201301113
P407
P577
2013-05-06T00:00:00Z