Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling. - Wikidata - wikimedia - TriplyDB

Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling.

Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling.

http://www.wikidata.org/entity/Q44557073

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Plasmons and Screening in Monolayer and Multilayer Black Phosphorus Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors.A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Photodiode-like behavior and excellent photoresponse of vertical Si/monolayer MoS2 heterostructures Photothermoelectric and photovoltaic effects both present in MoS2.Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction.Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates.Asymmetric electric field screening in van der Waals heterostructures.Hopping transport through defect-induced localized states in molybdenum disulphide.Atomically Thin Boron Nitride: Unique Properties and Applications A 2D Semiconductor-Self-Assembled Monolayer Photoswitchable Diode

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Electric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling.

http://www.wikidata.org/entity/Q44557073

description

2012 nî lūn-bûn

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2012年の論文

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2012年学术文章

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2012年学术文章

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2012年学术文章

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2012年學術文章

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name

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Advanced Materials

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Electric-field screening in at ...... e role of interlayer coupling.

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Emmanuele Cappelluti

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Gabino Rubio-Bollinger

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Nicolás Agraït

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Rafael Roldán

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P2860

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

Electric Field Effect in Atomically Thin Carbon Films

Two-dimensional atomic crystals

Emerging photoluminescence in monolayer MoS2.

Boron nitride substrates for high-quality graphene electronics.

Single-layer MoS2 transistors.

Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks.

Valley-selective circular dichroism of monolayer molybdenum disulphide.

Control of valley polarization in monolayer MoS2 by optical helicity.

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899-903

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scholarly article

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10.1002/ADMA.201203731

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6

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25

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Andres Castellanos-Gomez

Francisco Guinea

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2012-11-01T00:00:00Z

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232765883

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23118009

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1211.0574

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