Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
about
Broadband and enhanced nonlinear optical response of MoS2/graphene nanocomposites for ultrafast photonics applications.A two-dimensional semiconductor transistor with boosted gate control and sensing ability.Influence of post-annealing on the off current of MoS2 field-effect transistorsGiant magneto-optical Raman effect in a layered transition metal compound.Phase-transfer induced room temperature ferromagnetic behavior in 1T@2H-MoSe2 nanosheets.Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides.The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.Surface effects on electronic transport of 2D chalcogenide thin films and nanostructures.Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2.Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors.Trap density probing on top-gate MoS₂ nanosheet field-effect transistors by photo-excited charge collection spectroscopy.Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.
P2860
Q30397762-2545B50D-A4C5-4901-B35E-A2F0ADE74CB9Q33708118-891891D6-B373-4F84-B762-BA6B8F7B3C43Q35264548-BB0054A2-433C-485A-A4AB-472323E635F3Q36659126-02659519-AC4D-4096-9D96-9D16B5EE8A75Q37723953-3676B954-E616-4F18-8FC2-671AC503C662Q38833372-133F7253-F4A6-48E6-B414-72569045F67FQ38988062-40539FBA-C43A-4675-8A78-49B22302F68CQ39132857-A8912AED-5638-44F7-8C55-470744F7768CQ47196779-CEEE7A86-B68B-43CE-910C-0965B51F716AQ47941473-26ABF424-C747-4D9B-898F-B104CFFF77FDQ51694125-AB38EBAF-656B-4896-83E5-1E59D02EBDEAQ53022307-213FCF1D-02F9-494B-929D-C343B2624E62Q53339351-1D25EE4D-5A36-40C4-82FA-134A1DFC90FC
P2860
Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
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2012年學術文章
@zh-hant
name
Nanosheet thickness-modulated ...... effect transistor performance.
@en
Nanosheet thickness-modulated ...... effect transistor performance.
@nl
type
label
Nanosheet thickness-modulated ...... effect transistor performance.
@en
Nanosheet thickness-modulated ...... effect transistor performance.
@nl
prefLabel
Nanosheet thickness-modulated ...... effect transistor performance.
@en
Nanosheet thickness-modulated ...... effect transistor performance.
@nl
P2093
P2860
P356
P1433
P1476
Nanosheet thickness-modulated ...... effect transistor performance.
@en
P2093
Hee Sung Lee
Hyoung Joon Choi
Hyungjun Kim
Min Kyu Park
Seongil Im
Sung-Wook Min
Sunmin Ryu
Taewook Nam
P2860
P304
P356
10.1039/C2NR33443G
P407
P577
2012-12-12T00:00:00Z