The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

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Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering.Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.

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P2860

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

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http://www.wikidata.org/entity/Q38988062

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2015 nî lūn-bûn

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2015年の論文

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2015年学术文章

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2015年学术文章

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The Integration of Sub-10 nm G ...... Leakage and Enhanced Mobility.

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Item

label

The Integration of Sub-10 nm G ...... Leakage and Enhanced Mobility.

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prefLabel

The Integration of Sub-10 nm G ...... Leakage and Enhanced Mobility.

@en

P1476

The Integration of Sub-10 nm G ...... Leakage and Enhanced Mobility.

@en

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David Wei Zhang

http://www.w3.org/2001/XMLSchema#string

Lin Chen

http://www.w3.org/2001/XMLSchema#string

Peng Zhou

http://www.w3.org/2001/XMLSchema#string

Qing-Qing Sun

http://www.w3.org/2001/XMLSchema#string

Shi-Jin Ding

http://www.w3.org/2001/XMLSchema#string

Wen Yang

http://www.w3.org/2001/XMLSchema#string

Yang Geng

http://www.w3.org/2001/XMLSchema#string

P2860

Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

Single-layer MoS2 transistors.

Integrated circuits and logic operations based on single-layer MoS2.

MoS2 transistors operating at gigahertz frequencies.

How good can monolayer MoS₂ transistors be?

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.

Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

High-performance single layered WSe₂ p-FETs with chemically doped contacts.

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srep11921

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11921

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scholarly article

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10.1038/SREP11921

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English

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http://www.w3.org/2001/XMLSchema#string

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2015-07-06T00:00:00Z

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280031725

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26146017

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P932

4491716

http://www.w3.org/2001/XMLSchema#string

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

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P2860

P2860

The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P577

P5875

P6179

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P577

P5875

P6179

P698

P932