Reducing contact resistance in graphene devices through contact area patterning.
about
Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.Current crowding mediated large contact noise in graphene field-effect transistors.Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts.Plasmon modes in graphene: status and prospect.Electrical properties of graphene-metal contacts.Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon.Evidence of electric field-tunable tunneling probability in graphene and metal contact.Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.A monocrystal graphene domain biosensor array with differential output for real-time monitoring of glucose and normal saline.Two-dimensional materials for electronic applications1 / f noise in van der Waals materials and hybridsPhysical properties of low-dimensionalsp2-based carbon nanostructures
P2860
Q36035494-A797D044-D381-4704-86CF-AA488EED5DCEQ37500961-8DBAB99E-E322-4705-8DA6-FB3E5BD792EAQ37577629-FADCBD15-4CA8-41EF-9F37-37B545536130Q38240560-019A8D43-3A16-466E-9478-85028494847DQ40986227-13DF4191-9997-4B55-9F25-5B23929FC403Q42317406-7903056F-C78C-4571-8E47-04C32C6D11FAQ47975628-560B3718-F6BF-4AB7-822E-EF865FB6B427Q51624708-A05E5D77-4A70-40A1-A018-306C32B28CD5Q53551040-0322501C-A7D4-416B-A8BD-3E1FCD92889FQ57759861-D2B9CD49-021E-4462-AEAA-5040D5B23964Q58136722-D0D56C29-35F7-41E8-8BBA-8EDA3A2492F6Q58180891-05323792-CF54-43CD-AC51-34726DE241A6
P2860
Reducing contact resistance in graphene devices through contact area patterning.
description
2013 nî lūn-bûn
@nan
2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
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name
Reducing contact resistance in graphene devices through contact area patterning.
@en
Reducing contact resistance in graphene devices through contact area patterning.
@nl
type
label
Reducing contact resistance in graphene devices through contact area patterning.
@en
Reducing contact resistance in graphene devices through contact area patterning.
@nl
prefLabel
Reducing contact resistance in graphene devices through contact area patterning.
@en
Reducing contact resistance in graphene devices through contact area patterning.
@nl
P2093
P356
P1433
P1476
Reducing contact resistance in graphene devices through contact area patterning.
@en
P2093
Aaron D Franklin
Christos D Dimitrakopoulos
Damon B Farmer
Joshua T Smith
P304
P356
10.1021/NN400671Z
P407
P577
2013-03-08T00:00:00Z