Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

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Interfacial properties of borophene contacts with two-dimensional semiconductors.Electrical properties of graphene-metal contacts.Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping

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Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

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2015 nî lūn-bûn

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2015年の論文

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2015年学术文章

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Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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label

Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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P1476

Extremely Low Contact Resistan ...... oping and Edge Contact Design.

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P2093

Byungha Shin

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Dong-Ho Kang

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Gwangwe Yoo

http://www.w3.org/2001/XMLSchema#string

Hyun-Yong Yu

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Hyung-Youl Park

http://www.w3.org/2001/XMLSchema#string

Jaeho Jeon

http://www.w3.org/2001/XMLSchema#string

Jaeho Lee

http://www.w3.org/2001/XMLSchema#string

Jin-Hong Park

http://www.w3.org/2001/XMLSchema#string

Jinhee Lee

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Seongjun Park

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P2860

Measurement of the elastic properties and intrinsic strength of monolayer graphene

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One-dimensional electrical contact to a two-dimensional material.

Large-scale pattern growth of graphene films for stretchable transparent electrodes.

Low-contact-resistance graphene devices with nickel-etched-graphene contacts.

Tuning the Dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole.

Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

Reducing contact resistance in graphene devices through contact area patterning.

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.

Electronic confinement and coherence in patterned epitaxial graphene.

P304

864-870

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scholarly article

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10.1002/ADMA.201503715

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English

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2015-11-30T00:00:00Z

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26619053

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P921

graphene

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

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P2860

P2860

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

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P577

P698

P921