Electronic properties of isosymmetric phase boundaries in highly strained Ca-Doped BiFeO₃.
about
Structural and electronic transformation pathways in morphotropic BiFeO3.Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity.Field enhancement of electronic conductance at ferroelectric domain walls.Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.Unusual continuous dual absorption peaks in Ca-doped BiFeO3 nanostructures for broadened microwave absorption.Deep data analysis via physically constrained linear unmixing: universal framework, domain examples, and a community-wide platform.
P2860
Electronic properties of isosymmetric phase boundaries in highly strained Ca-Doped BiFeO₃.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
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2014年学术文章
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2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
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2014年学术文章
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2014年學術文章
@yue
2014年學術文章
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name
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@en
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@nl
type
label
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@en
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@nl
prefLabel
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@en
Electronic properties of isosy ...... ghly strained Ca-Doped BiFeO₃.
@nl
P2093
P2860
P50
P356
P1433
P1476
Electronic properties of isosymmetric phase boundaries in highly strained Ca-Doped BiFeO₃
@en
P2093
Denny Köhler
Lukas M Eng
Peter Milde
Ramamoorthy Ramesh
Tino Uhlig
Xiaoqing Pan
P2860
P304
P356
10.1002/ADMA.201400557
P407
P577
2014-04-14T00:00:00Z