Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.
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Ferroelectric Domain Structure and Local Piezoelectric Properties of Lead-Free (Ka0.5Na0.5)NbO₃ and BiFeO₃-Based Piezoelectric CeramicsField enhancement of electronic conductance at ferroelectric domain walls.Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors.New Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry.
P2860
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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2016年学术文章
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2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
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2016年學術文章
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name
Domain-wall conduction in ferr ...... cumulation of charged defects.
@en
Domain-wall conduction in ferr ...... cumulation of charged defects.
@nl
type
label
Domain-wall conduction in ferr ...... cumulation of charged defects.
@en
Domain-wall conduction in ferr ...... cumulation of charged defects.
@nl
prefLabel
Domain-wall conduction in ferr ...... cumulation of charged defects.
@en
Domain-wall conduction in ferr ...... cumulation of charged defects.
@nl
P2093
P2860
P356
P1433
P1476
Domain-wall conduction in ferr ...... ccumulation of charged defects
@en
P2093
Andreja Bencan
Barbara Malic
Bostjan Jancar
Gasper Tavcar
Goran Drazic
Hana Ursic
Julian Walker
Maja Makarovic
Naonori Sakamoto
Tadej Rojac
P2860
P2888
P304
P356
10.1038/NMAT4799
P407
P577
2016-11-14T00:00:00Z