Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.
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Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors.Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.Finite-size supercell correction for charged defects at surfaces and interfaces.Dangling bond defects at Si-SiO2 interfaces: atomic structure of the P(b1) centerSpherosiloxane H8Si8O12 clusters on Si(001): First-principles calculation of Si 2p core-level shifts.Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces.First principles molecular dynamics of dense plasmas.Calculation of core level shifts within DFT using pseudopotentials and localized basis setsInterface structure between silicon and its oxide by first-principles molecular dynamics
P2860
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P2860
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.
description
1996 nî lūn-bûn
@nan
1996年の論文
@ja
1996年学术文章
@wuu
1996年学术文章
@zh
1996年学术文章
@zh-cn
1996年学术文章
@zh-hans
1996年学术文章
@zh-my
1996年学术文章
@zh-sg
1996年學術文章
@yue
1996年學術文章
@zh-hant
name
Theory of Si 2p core-level shifts at the Si
@nl
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.
@en
type
label
Theory of Si 2p core-level shifts at the Si
@nl
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.
@en
prefLabel
Theory of Si 2p core-level shifts at the Si
@nl
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.
@en
P2860
P1433
P1476
Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface
@en
P2093
P2860
P304
10942-10950
P356
10.1103/PHYSREVB.53.10942
P407
P577
1996-04-01T00:00:00Z