Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study.
about
Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.Dangling bond defects at Si-SiO2 interfaces: atomic structure of the P(b1) centerSpherosiloxane H8Si8O12 clusters on Si(001): First-principles calculation of Si 2p core-level shifts.Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface.Origin of fine structure in si photoelectron spectra at silicon surfaces and interfaces.Optical Second Harmonic Generation in Semiconductor NanostructuresInterface structure between silicon and its oxide by first-principles molecular dynamics
P2860
Q46861651-F3956947-9D20-4032-9910-76AD9C420F29Q50107053-8B992AB4-C668-4525-8343-84AC2AB9D804Q50112828-4FEFD569-7EB5-47E1-B452-EDDBBC4B9314Q50113177-9939F614-4BB9-4B02-8F8C-2382FC96A4B3Q51197987-7CE76466-09E2-48C1-B841-F7958854CDAFQ58913351-8C90249C-313F-494E-9B21-11F33B49D4DFQ59086197-2C44BA05-ED45-498B-9D3A-AA09E2BB5564
P2860
Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study.
description
1995 nî lūn-bûn
@nan
1995年の論文
@ja
1995年学术文章
@wuu
1995年学术文章
@zh
1995年学术文章
@zh-cn
1995年学术文章
@zh-hans
1995年学术文章
@zh-my
1995年学术文章
@zh-sg
1995年學術文章
@yue
1995年學術文章
@zh-hant
name
Si 2p core-level shifts at the Si
@nl
Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study.
@en
type
label
Si 2p core-level shifts at the Si
@nl
Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study.
@en
prefLabel
Si 2p core-level shifts at the Si
@nl
Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study.
@en
P2860
P1476
Si 2p core-level shifts at the Si(001)-SiO2 interface: A first-principles study
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.74.1024
P407
P577
1995-02-01T00:00:00Z