Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.
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Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
@wuu
2016年学术文章
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2016年学术文章
@zh-cn
2016年学术文章
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2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
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2016年學術文章
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name
Competitive effects of oxygen ...... ent and charge hopping models.
@en
Competitive effects of oxygen ...... ent and charge hopping models.
@nl
type
label
Competitive effects of oxygen ...... ent and charge hopping models.
@en
Competitive effects of oxygen ...... ent and charge hopping models.
@nl
prefLabel
Competitive effects of oxygen ...... ent and charge hopping models.
@en
Competitive effects of oxygen ...... ent and charge hopping models.
@nl
P2860
P356
P1476
Competitive effects of oxygen ...... ment and charge hopping models
@en
P2093
Hisao Nakamura
Yoshihiro Asai
P2860
P304
P356
10.1039/C6CP00916F
P407
P577
2016-04-01T00:00:00Z