Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.
about
Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
@zh
2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
@yue
2015年學術文章
@zh-hant
name
Highly reliable switching via ...... eneous and multi-layered GaZnO
@nl
Highly reliable switching via ...... random access memory devices.
@en
type
label
Highly reliable switching via ...... eneous and multi-layered GaZnO
@nl
Highly reliable switching via ...... random access memory devices.
@en
prefLabel
Highly reliable switching via ...... eneous and multi-layered GaZnO
@nl
Highly reliable switching via ...... random access memory devices.
@en
P2093
P2860
P356
P1476
Highly reliable switching via ...... random access memory devices.
@en
P2093
Doo Hyun Yoon
Heesoo Lee
Hyun Jae Kim
Sung Pyo Park
Young Jun Tak
P2860
P304
P356
10.1039/C4CC10209F
P407
P577
2015-06-01T00:00:00Z