Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.
about
A learnable parallel processing architecture towards unity of memory and computing.Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.Conductance Quantization in Resistive Random Access Memory.Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode OxidationFlexible bio-memristive devices based on chicken egg albumen:Au@SiO2 core-shell nanoparticle nanocomposites.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices.Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories.Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO(x)-based resistive random access memory devices.Revival of "dead" memristive devices: case of WO3-x.
P2860
Q35953322-041D23AA-B001-451C-B27E-9223F5CD7DEDQ36035494-BE52105D-44BC-4FAE-81EF-71221AEC18ADQ36214844-18B9E1E2-3125-4C92-AFCF-0D0FE2108812Q36588643-7CE29A38-03D5-4614-94ED-A0335FC6D31CQ41697157-DDE6B874-BC51-4003-B6CA-376E1745ABB6Q47595202-90D58685-E841-497C-9549-4723446ADB1BQ47765073-C3245E68-A06A-4964-858F-665216BE0BC5Q50595185-A36C035F-A326-4F84-AA59-AB359603E16BQ50634886-99E46301-51E2-4E88-A534-A015ECBA787CQ50736807-0B819CB3-E615-4259-A47C-1B9D18929F93Q51600183-3667B62B-0904-4FF3-8A6C-7B3A130AAEE4
P2860
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.
description
2015 nî lūn-bûn
@nan
2015 թուականի Յունուարին հրատարակուած գիտական յօդուած
@hyw
2015 թվականի հունվարին հրատարակված գիտական հոդված
@hy
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
name
Evolution of conductive filame ...... esistive random access memory.
@ast
Evolution of conductive filame ...... esistive random access memory.
@en
Evolution of conductive filame ...... esistive random access memory.
@nl
type
label
Evolution of conductive filame ...... esistive random access memory.
@ast
Evolution of conductive filame ...... esistive random access memory.
@en
Evolution of conductive filame ...... esistive random access memory.
@nl
prefLabel
Evolution of conductive filame ...... esistive random access memory.
@ast
Evolution of conductive filame ...... esistive random access memory.
@en
Evolution of conductive filame ...... esistive random access memory.
@nl
P2093
P2860
P356
P1433
P1476
Evolution of conductive filame ...... esistive random access memory.
@en
P2093
Haitao Sun
Hangbing Lv
Hongtao Liu
Shibing Long
Writam Banerjee
Xiaoxin Xu
P2860
P2888
P356
10.1038/SREP07764
P407
P577
2015-01-14T00:00:00Z
P5875
P6179
1037397357